1.5 μm Wavelength InGaAsP/InP DH LED with Improved Radiance Characteristics
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概要
- 論文の詳細を見る
The effect of the composition of the carrier-confining layer on the radiance performance of an InGaAsP/InP DH LED at a wavelength of 1.5 μm was investigated. From precision spectrum measurements, the confining layer grown by conventional liquid phase epitaxy was found to allow electrons in the active layer to leak over the heterobarrier into the confining layer. This problem was eliminated by introducing an InP confining layer grown by a new technique, in which a reduced temperature and a thick melt were used. More than 50% improvement of radiance was realized and power coupled into a 50 μm core, 0.2 NA, graded index fiber in excess of 20 μW was achieved at 100 mA.
- 社団法人応用物理学会の論文
- 1982-03-05
著者
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Wada Osamu
Fujitsu Laboratories
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SAKURAI Teruo
Fujitsu Laboratories Limited
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SANADA Tatsuyuki
Fujitsu Laboratories Limited
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NISHITANI Yorimitsu
Fujitsu Laboratories Ltd.
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Sanada Tatsuyuki
Fujitsu Laboratories Ltd.
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