Electron Spin Relaxation Dynamics in InGaAs/InP Multiple-Quantum Wells
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概要
- 論文の詳細を見る
The electron spin relaxation of InGaAs/InP multiple-quantum wells is investigated at room temperature using time-resolved polarization-dependent absorption measurements. The spin relaxation time is dependent on the quantum confined energy, E_<le> according to ⊤_s∝ E^<-1>_<1e>. The dependence differs from that of the D'yakonov-Perel' interaction, which governs the spin relaxation of GaAs quantum wells at room temperature, and suggests the possibility of the existence of an additional spinelaxation mechanism.
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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Tackeuchi Atsushi
Department Of Applied Physics Waseda University
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Wada Osamu
FESTA Laboratories
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Wada Osamu
Festa Laboratories Femtosecond Technology Research Association
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