Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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MATSUKURA Fumihiro
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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OHNO Hideo
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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Tackeuchi Atsushi
Department Of Applied Physics Waseda University
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Ohno H
Jaeri-riken Spring-8 Project Team
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Ohno Hideo
Molten Material Laboratory Division Of Nuclear Fuel Research Japan Atomic Energy Research Institute
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Adachi Taro
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Ohno Y
Jst‐presto Saitama Jpn
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Matsukura F
Research Institute Of Electrical Communications
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Matsukura Fumihiro
Hokkaido University
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Matsukura Fumihiro
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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OHNO Yuzo
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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TERAUCHI Ryota
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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SATO Arao
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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Sato Arao
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Terauchi Ryota
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Matsukura Fumihiro
Research Institute Of Electrical Communications
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