Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2008-09-25

著者

• HANYU Takahiro

  Research Institute of Electrical Communication, Tohoku University

• IKEDA Shoji

  Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University

• HASEGAWA Haruhiro

  Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University

• OHNO Hideo

  Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University

• MIURA Katsuya

  Hitachi Advanced Research Laboratory

• HAYAKAWA Jun

  Hitachi Advanced Research Laboratory

• ENDOH Tetsuo

  Center for Interdisciplinary Research, Tohoku University

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Ohno Hideo

  Tohoku Univ. Sendai Jpn

• Ohno Hideo

  Laboratory For Electronic Intelligent Systems

• Endoh Testuo

  Center For Interdisciplinary Research Tohoku University

• Hasegawa Haruhiro

  Riec Tohoku University

• Endoh Tetsuo

  Tohoku Univ. Sendai‐shi Jpn

• Hanyu Takahiro

  Riec Tohoku University

• Hanyu Takahiro

  Research Institute Of Electrical Communication Tohoku University

• MATSUNAGA Shoun

  Research Institute of Electrical Communication, Tohoku University

• Mizunuma Kotaro

  Hitachi Advanced Research Laboratory

• Matsunaga Shoun

  Laboratory For Brainware Systems Research Institute Of Electrical Communication Tohoku University

• Ikeda Shoji

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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