Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
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概要
- 論文の詳細を見る
- 2010-05-01
著者
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Yasuda Yukio
Center For Interdisciplinary Research Tohoku University:jst Crest
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ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
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SAKUI Koji
Center for Interdisciplinary Research, Tohoku University
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Sakui Koji
Center For Interdisciplinary Research Tohoku University:jst Crest
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Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University
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Sakui Koji
Center For Interdisciplinary Research Tohoku University
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Yasuda Yukio
Center For Interdisciplinary Research Tohoku University
関連論文
- Impact of floating body type DRAM with the vertical MOSFET (Silicon devices and materials)
- Impact of floating body type DRAM with the vertical MOSFET (Electron devices)
- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Silicon devices and materials)
- Evaluation of 1/f noise characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET (Electron devices)
- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Electron devices)
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
- The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
- The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
- The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
- The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
- Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
- Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
- Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
- Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
- Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology)
- Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Design of 30nm FinFETs and Double Gate MOSFETs with Halo Structure
- Design of 30nm FinFET with Halo Structure
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Design of 30nm FinFET with Halo Structure
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)
- Future High Density Memory with Vertical Structured Device Technology
- Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
- Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
- Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop(Session8A: Si Devices III)
- Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop(Session8A: Si Devices III)
- Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor(Session5A: Si Devices II)
- Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor(Session5A: Si Devices II)
- Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)
- Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)
- Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)
- Fabrication of Silicon Pillar with 25 nm Half Pitch Using New Multiple Double Patterning Technique
- Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices
- Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
- Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping
- Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
- Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
- Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
- Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition
- Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation
- Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits
- Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit
- Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65nm CMOS Process
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation
- Wave Packet Dynamics in the Spin Torque Transfer
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide
- Disturb-Free Three-Dimensional Vertical Floating Gate NAND with Separated-Sidewall Control Gate
- Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics
- Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory
- Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme
- Current Controlled MOS Current Mode Logic with Auto-Detection of Threshold Voltage Fluctuation
- Low Power Nonvolatile Counter Unit with Fine-Grained Power Gating
- A Schmitt Trigger Based SRAM with Vertical MOSFET
- High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction
- Source/Drain Engineering for High Performance Vertical MOSFET
- Multi-Electron Wave Packet Dynamics in Applied Electric Field
- Future High Density Memory with Vertical Structured Device Technology
- Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme
- Low Frequency Noise Characterization in Metal Oxide Semiconductor Field Effect Transistor Based Charge Transfer Device at Room and Low Temperatures
- Influence of Coulomb Blockade on Wave Packet Dynamics in Nanoscale Structures
- Fabrication of a Magnetic Tunnel Junction-Based 240-Tile Nonvolatile Field-Programmable Gate Array Chip Skipping Wasted Write Operations for Greedy Power-Reduced Logic Applications