Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)

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概要

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• In this paper, we compare the 1/f noise characteristics of High-k/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET by measurement, and evaluate the time fluctuation of drive current. Specifically, we focus on the statistical distribution of the time fluctuations of drive current of High-k/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET. We have found new phenomena in the 1/f noise characteristics of SiON/Poly-Si Gate MOSFET in comparison with High-k/Metal Gate MOSFET. In the case of SiON/Poly-Si Gate MOSFET, as the gate width is narrowed, Power Spectrum Density (PSD) depends on 1/f^2 that is the slope. Moreover, as the gate width is widened, PSD depends on 1/f and the value of PSD shifts lower. On the other hand, in the case of High-k/Metal Gate MOSFET, the value of PSD is much larger than that of SiON/Poly-Si Gate MOSFET. Moreover, there is no dependency of PSD on gate width. This result is a useful knowledge for future High-k/Metal Gate MOSFETs.

• 2010-06-23

著者

• ENDOH Tetsuo

  Center for Interdisciplinary Research, Tohoku University

• Imamoto Takuya

  Center for Interdisciplinary Research, Tohoku University

• Sasaki Takeshi

  Center for Interdisciplinary Research, Tohoku University

• Imamoto Takuya

  Center For Interdisciplinary Research Tohoku University

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Sasaki Takeshi

  Center For Interdisciplinary Research Tohoku University

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