The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)

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概要

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• As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials have attracted considerable attention. We investigated the dependence of threshold voltage (Vth) characteristics of the High-k/Metal Gate MOSFET on the temperature, in comparison to conventional SiON/Poly-Si Gate MOSFET. Two aspects including the Fermi level and the channel mobility in MOSFET are discussed in details. Furthermore, the influence of threshold voltage characteristics of the High-k/Metal Gate MOSFET on the logic threshold voltage (Vth-inv) of CMOS inverter is renorted in this naner.

• 2010-06-23

著者

• ENDOH Tetsuo

  Center for Interdisciplinary Research, Tohoku University

• Imamoto Takuya

  Center for Interdisciplinary Research, Tohoku University

• Sasaki Takeshi

  Center for Interdisciplinary Research, Tohoku University

• Imamoto Takuya

  Center For Interdisciplinary Research Tohoku University

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Endoh Testuo

  Center For Interdisciplinary Research Tohoku University

• Sasaki Takeshi

  Center For Interdisciplinary Research Tohoku University

• Endoh Tetsuo

  Tohoku Univ. Sendai‐shi Jpn

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