Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping

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概要

• 論文の詳細を見る

• A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.

• 2011-04-25

著者

• Ono Yukinori

  NTT Basic Research Laboratories

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Ohdomari Iwao

  School Of Science And Engineering Waseda University

• Tanii Takashi

  School Of Science And Engineering Waseda University

• Ohdomari Iwao

  School of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan

• Hori Masahiro

  School of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan

• Shinada Takahiro

  Waseda Institute for Advanced Study, Waseda University, Shinjuku, Tokyo 169-8050, Japan

• Taira Keigo

  School of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan

• Komatsubara Akira

  School of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan

• Ono Yukinori

  NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 234-0198, Japan

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