Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
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概要
- 論文の詳細を見る
An electrometer based on field-effect transistors (FETs) was fabricated on a silicon-on-insulator substrate (SOI). The electrometer has a nanometer-scale small channel and a capacitively coupled node, where single electrons are stored. We discuss the dependence of the charge sensitivity of the electrometer on its structure and on its operation condition and gives guides for achieving the higher charge sensitivity. The device optimization based on this dependence allows the demonstration of the electrometer with extremely high charge sensitivity, 0.0013 $e/\sqrt{\text{Hz}}$ at 1 Hz, at room temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-11-25
著者
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Ono Yukinori
NTT Basic Research Laboratories
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Inokawa Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Fujiwara Akira
Ntt Basic Research Laboratories Ntt Corporation
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Koechlin Charlie
Ntt Basic Research Laboratories Ntt Corporation
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Nishiguchi Katsuhiko
Ntt Basic Research Laboratories Ntt Corporation
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Koechlin Charlie
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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