Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2009-02-25

著者

• IKEDA Shoji

  Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University

• HASEGAWA Haruhiro

  Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University

• OHNO Hideo

  Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University

• MIURA Katsuya

  Hitachi Advanced Research Laboratory

• HAYAKAWA Jun

  Hitachi Advanced Research Laboratory

• ENDOH Tetsuo

  Center for Interdisciplinary Research, Tohoku University

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Ohno Hideo

  Tohoku Univ. Sendai Jpn

• Ohno Hideo

  Laboratory For Electronic Intelligent Systems

• Miura Katsuya

  Laboratory For Nanoelectronics And Spintronics Research Institute Of Electrical Communication Tohoku

• Endoh Testuo

  Center For Interdisciplinary Research Tohoku University

• Hasegawa Haruhiro

  Riec Tohoku University

• Endoh Tetsuo

  Tohoku Univ. Sendai‐shi Jpn

• Hanyu Takahiro

  Riec Tohoku University

• MATSUNAGA Shoun

  Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University

• HIYAMA Kimiyuki

  Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University

• MATSUMOTO Atsushi

  Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University

• HANYU Takahiro

  Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University

• Mizunuma Kotaro

  Hitachi Advanced Research Laboratory

• Matsunaga Shoun

  Laboratory For Brainware Systems Research Institute Of Electrical Communication Tohoku University

• Hiyama Kimiyuki

  Laboratory For Brainware Systems Research Institute Of Electrical Communication Tohoku University

• Ikeda Shoji

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

関連論文

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• Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Electron devices)
• Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
• Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
• Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
• Study on Quantum Electro-Dynamics in Vertical MOSFET
• Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
• The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
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• Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
• The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
• The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
• Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
• The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
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• Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
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