CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio
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概要
- 論文の詳細を見る
The effect of Co20Fe60B20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co90Fe10/Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB layer, reached 43% at 1.77 W/cm2 in MTJs with a 1.8-nm-thick CoFeB layer inserted on both sides of the MgO barrier. With increasing CoFeB layer thickness, the optimal annealing temperature ($T_{\text{a}}$) realizing the maximum TMR ratio increased along with the TMR ratio. The MTJs with 3.0-nm-thick CoFeB deposited at 1.77 W/cm2 showed a TMR ratio of 91% at $T_{\text{a}} = 250$ °C, where the perpendicular magnetic anisotropy is maintained.
- 2010-04-25
著者
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IKEDA Shoji
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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Yamamoto Hiroyuki
Laboratory For Biopolymer Chemistry Department Of Polymer Science And Engineering Kyoto Institute Of
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Kotaro Mizunuma
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Mizunuma Kotaro
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Hideo Ohno
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Katsuya Miura
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hua Dong
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Haruhiro Hasegawa
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Jun Hayakawa
Advanced Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Kenchi Ito
Advanced Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Fumihiro Matsukura
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Ikeda Shoji
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Shoji Ikeda
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hiroyuki Yamamoto
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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IKEDA Shoji
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
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