Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering
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概要
- 論文の詳細を見る
We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth surface and highly (001) oriented MgO. Using this MgO as a tunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at room temperature (578% at 5 K) was realized after annealing at 325°C or higher, which appears to be related to a highly (001) oriented CoFeB texture promoted by the smooth and highly oriented MgO. Electron-beam lithography defined deep-submicron MTJs having a low-resistivity Au underlayer with the high-pressure deposited MgO showed high TMR ratio at low resistance-area product ($\mathit{RA}$) below 10 $\Omega$ μm2 as 27% at $\mathit{RA} = 0.8$ $\Omega$ μm2, 77% at $\mathit{RA} = 1.1$ $\Omega$ μm2, 130% at $\mathit{RA} = 1.7$ $\Omega$ μm2, and 165% at $\mathit{RA} = 2.9$ $\Omega$ μm2.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-11-10
著者
-
Lee Young
Laboratory For Nanoelectronics And Spintronics Riec Tohoku Univ.
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HAYAKAWA Jun
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Sasaki Ryutaro
Laboratory For Nanoelectronics And Spintronics Riec Tohoku University
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Matsukura Fumihiro
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Meguro Toshiyasu
Laboratory For Nanoelectronics And Spintronics Riec Tohoku University
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Ikeda Shoji
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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