Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation
スポンサーリンク
概要
- 論文の詳細を見る
Very high photoconductive gain of about 10^4-10^5 is observed in GaAs photoconductive detectors for low photon flux density of 10^<15>-10^<17> photons/(cm^2・s). This high gain decreases with increasing photon flux density. A model is proposed which includes carrier separation by surface band dending and surface recombination of photogenerated carriers controlled by surface barrier height. This model is shown to quantitatively explain the photon flux density dependence of both high gain and response time.
- 社団法人応用物理学会の論文
- 1984-05-20
著者
-
Ohno H
Jaeri-riken Spring-8 Project Team
-
Ohno Hideo
Molten Material Laboratory Division Of Nuclear Fuel Research Japan Atomic Energy Research Institute
-
Ohno Hideo
Laboratory For Electronic Intelligent Systems
-
Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
-
Ohno Hideo
Department Of Chemistry Faculty Of Science Kyoto University
-
Matsuo N
Furukawa Electric Co. Ltd. Tokyo
-
MATSUO Nozomu
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
-
Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
関連論文
- Early Mortality Following Intracerebral Infection with Tick-Borne Encephalitis Virus Oshima Strain in a Mouse Model
- Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
- Spin Polarization Dependent Far Infrared Absorption in Ga_Mn_xAs : Semiconductors
- Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
- Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
- High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
- Dark Current in Selectively Doped N-AlGaAs/GaAs CCDs
- Nucleolin and the Packaging Signal, Ψ, Promote the Budding of Human Immunodeficiency Virus Type-1 (HIV-1)
- Meningeal large granular lymphocyte lymphoma
- Semiconductor Spin Electronics
- A Spin Esaki Diode
- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
- Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs(211)B
- Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs (211)B
- (Ga, Mn)As /GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy
- Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
- Giant TMR in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering
- Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature
- Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
- Migration-Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source
- Blue Light-Emitting Diode Based on ZnO
- A Computer Analysis of Effects of Annealing on InP Insulator-Semiconductor Interface Properties Using MIS C-V Curves : Surfaces, Interfaces and Films
- Electronic Properties of a Photochemical Oxide-GaAs Interface
- Hybrid Orbital Energy for Heterojunction Band Lineup
- InP High Mobility Enhancement MISFETs Using Anodically Grown Al_2O_3-Native Oxide/InP Interface : LATE NEWS
- Molecular Beam Epitaxy and Migration-Enhanced Epitaxial Growth of InP Using Polycrystalline InP as Phosphorus Source
- Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG
- Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process
- Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process
- Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy
- Free Carrier Profile Synthesis in MOCVD Grown GaAs by 'Atomic-Plane' Doping
- Deep Electron Traps in Undoped GaAs Grown by MOCVD
- Asymptomatic emphysematous cholecystitis
- Electrical Resistivity of Chromium Alloys
- HII-5 A Case Study of Measurement of Formaldehyde and Volatile Organic Compounds Pollution in Dwellings
- Herpes encephalitis and paraneoplastic limbic encephalitis
- Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram
- Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Welts
- Magnetic Properties of the hcp Iron-Ruthenium Alloys
- Rabies virus dissemination in neural tissues of autopsy cases due to rabies imported into Japan from the Philippines : Immunohistochemistry
- Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers
- Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices
- Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
- Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well
- Cross-reactive antigenicity of nucleoproteins of lyssaviruses recognized by a monospecific antirabies virus nucleoprotein antiserum on paraffin sections of formalin-fixed tissues
- Dependencies of Transport and Photoluminescence on Morphology of Vacuum Deposited C_ Films
- Characterization of Deep Levels in Si-Doped In_xAl_As Layers Growrn by Molecular Beam Epitaxy
- Immunohistochemical Localization of Secretory Component(SC) and Carcinoembryonic Antigen(CEA) in Human Gastric Mucosa.
- A Computer Simulation of the Recombination Process at Semiconductor Surfaces
- Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Poly-Si and a-Si: H MOS Photodiodes for Large-Area, High Spatial Resolution Photosensor Arrays : I-2: SILICON SOLAR CELLS (2) : Polycristalline Silicon
- Structural Analysis of Molten Na_2BeF_4 and NaBeF_3 by X-ray Diffraction(Materials, Metallurgy, Weldability)
- Structural Analysis of Molten Na_2BeF_4 by X-ray Diffraction
- Self-Diffusion of Sodium and Potassium in Molten Flinak
- Self-Diffusion of Fluorine and Lithium in Molten Flinak
- Self-Diffusion of Lithium in Molten LiBeF_3
- Self-Diffusion of Lithium in Molten Li_2BeF_4
- Self-Diffusion of Fluorine in Molten LiBeF_3
- Reappraisal of Si-Interlayer-Induced Change of Band Discontinuity as GaAs-AlAs Heterointerface Taking Account of Delta-Doping
- Neutralizing antibody against severe acute respiratory syndrome (SARS)-coronavirus spike is highly effective for the protection of mice in the murine SARS model
- Covalent bonded Gag multimers in human immunodeficiency virus type-1 particles
- Chiral Recognition of Ru(phen)^_3 by Anionic Cyclodextrins
- Iron-Doped Liquid-Phase-Epitaxial GaAs Layers with Negative Resistance Properties
- Growth of a (GaAs)_n/(InAs)_n Superlattice Semiconductor by Molecular Beam Epitaxy
- Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate
- Electric Field Control of Ferromagnetism in Semiconductors
- Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers
- GaAs and In_Ga_As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE : Surfaces, Interfaces and Films
- Low Field Transport Properties of Two-Dimensional Electron Gas in Selectively Doped N-AlGaAs/GaInAs/GaAs Pseudomorphic Structures : Electrical Properties of Condensed Matter
- In Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors
- High Efficiency MOS Solar Cells by Anodic Oxidation Processes : II-1: COMPOUND SEMICONDUCTOR SOLAR CELLS (I)
- Trimethylgallium Supply without the Use of Bubbling in GaAs Growth by Metalorganic Vapor Phase Epitaxy
- Thermally Activated Longitudinal Optical Phonon Scattering of a 3.8 THz GaAs Quantum Cascade Laser
- In_Ga_As MISFETs Having an Ultrathin MBE Si Interface Control Layer and Photo-CVD SiO_2 Insulator (SOLID STATE DEVICES AND MATERIALS 1)
- A Common Energy Reference for DX Centers and EL2 Levels in III-V Compound Semiconductors
- High-Efficiency GaAs MOS Solar Cells by Anodization in Active Region : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Control of GaAs Schottky Barrier Height by Ultrathin Molecular Beam Epitaxy Si Interface Control Layer
- Spin Dependent Phenomena in Magnetic and Non-Magnetic III-V's
- Spintronics : From Materials to Circuits
- Polycrystalline and Amorphous Si MOS Solar Cells by Anodization : I-2: SILICON SOLAR CELLS (2) : Polycristalline Silicon
- Amorphous Silicon Schottky and MIS Solar Cells by rf Sputtering and rf Glow Discharge Decomposition
- Monolithic Integration of GaAs Photoconductive Detectors and MESFETs with Distributed Coupling to Optical Fibers
- Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation
- Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer
- Correlation between the Location of the Interface State Minimum at Insulator-Semiconductor Interfaces and Schottky Barrier Heights
- Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope
- Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme
- Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
- Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field
- InAs Quantum Cascade Lasers Based on Coupled Quantum Well Structures
- Size Dependence of Magnetic Properties of Nanoscale CoFeB--MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance
- A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14 μm
- Current-Assisted Domain Wall Motion in Ferromagnetic Semiconductors
- An InAs-Based Intersubband Quantum Cascade Laser
- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
- Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering
- High-Mobility Field-Effect Transistors Based on Single-Crystalline ZnO Channels
- Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field