Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
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概要
- 論文の詳細を見る
We have investigated the electron mobility (µ) dependence and the electron quantized energy dependence of the electron spin relaxation time (τs) in n-type and undoped GaAs/AlGaAs multiple quantum wells at room temperature. τs ∝µ-1 obtained from the experimental results is consistent with the theoretical prediction based on the D'yakonov-Perel' theory.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-04-30
著者
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Tackeuchi Atsushi
Department Of Applied Physics Waseda University
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Adachi Taro
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Matsukura Fumihiro
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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OHNO Yuzo
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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Sato Arao
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Terauchi Ryota
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Ohno Yuzo
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University,
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Matsukura Fumihiro
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University,
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Adachi Taro
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University,
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