InAs Quantum Cascade Lasers Based on Coupled Quantum Well Structures
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概要
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We report the operation of mid-infrared InAs quantum cascade lasers based on coupled quantum well structures. The laser structures are grown on n-type InAs(100) substrate by solid-source molecular beam epitaxy. The resonant longitudinal optical phonon scattering is used for carrier extraction from ground state in active layers. The laser emitting around 9.1 μm in the pulse mode operates up to 160 K. The observed minimum threshold current density is 3.6 kA/cm2 at 80 K. We also measure the waveguide loss and compare with the design.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Ohtani Keita
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Fujita Kazuue
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Japan
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