A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14 μm
スポンサーリンク
概要
- 論文の詳細を見る
We report a low threshold current density InAs/AlGaSb superlattice quantum cascade laser operating at 14 μm. In order to reduce the threshold current density, InAs/AlGaSb superlattice structures providing large oscillator strength and fast carrier depopulation are used for the active layers. Observed threshold current density at 80 K is 0.92 kA/cm2, which is about 5 times lower than that of the first InAs/AlSb quantum cascade laser reported earlier. This is among lowest threshold current density of quantum cascade lasers operating in the mid-infrared spectrum region.
- Japan Society of Applied Physicsの論文
- 2004-07-01
著者
-
Ohno Hideo
Laboratory For Electronic Intelligent Systems
-
Ohtani Keita
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
-
Fujita Kazuue
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Japan
関連論文
- Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
- Spin Polarization Dependent Far Infrared Absorption in Ga_Mn_xAs : Semiconductors
- Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
- Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
- High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
- Dark Current in Selectively Doped N-AlGaAs/GaAs CCDs
- Semiconductor Spin Electronics
- A Spin Esaki Diode
- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
- Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs(211)B
- Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs (211)B
- (Ga, Mn)As /GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy
- Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
- Giant TMR in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering
- Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature
- Blue Light-Emitting Diode Based on ZnO
- A Computer Analysis of Effects of Annealing on InP Insulator-Semiconductor Interface Properties Using MIS C-V Curves : Surfaces, Interfaces and Films
- Electronic Properties of a Photochemical Oxide-GaAs Interface
- InP High Mobility Enhancement MISFETs Using Anodically Grown Al_2O_3-Native Oxide/InP Interface : LATE NEWS
- Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy
- Free Carrier Profile Synthesis in MOCVD Grown GaAs by 'Atomic-Plane' Doping
- Deep Electron Traps in Undoped GaAs Grown by MOCVD
- Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers
- Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices
- Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
- Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well
- Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Electric Field Control of Ferromagnetism in Semiconductors
- GaAs and In_Ga_As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE : Surfaces, Interfaces and Films
- Trimethylgallium Supply without the Use of Bubbling in GaAs Growth by Metalorganic Vapor Phase Epitaxy
- Thermally Activated Longitudinal Optical Phonon Scattering of a 3.8 THz GaAs Quantum Cascade Laser
- Spin Dependent Phenomena in Magnetic and Non-Magnetic III-V's
- Spintronics : From Materials to Circuits
- Monolithic Integration of GaAs Photoconductive Detectors and MESFETs with Distributed Coupling to Optical Fibers
- Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation
- Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer
- Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope
- Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme
- Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
- Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field
- InAs Quantum Cascade Lasers Based on Coupled Quantum Well Structures
- Size Dependence of Magnetic Properties of Nanoscale CoFeB--MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance
- A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14 μm
- Current-Assisted Domain Wall Motion in Ferromagnetic Semiconductors
- An InAs-Based Intersubband Quantum Cascade Laser
- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
- Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering
- High-Mobility Field-Effect Transistors Based on Single-Crystalline ZnO Channels
- Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field