InP High Mobility Enhancement MISFETs Using Anodically Grown Al_2O_3-Native Oxide/InP Interface : LATE NEWS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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Ohno H
Jaeri-riken Spring-8 Project Team
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Ohno Hideo
Molten Material Laboratory Division Of Nuclear Fuel Research Japan Atomic Energy Research Institute
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Ohno Hideo
Department Of Gastroenterology Red Cross Hospital
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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SAWADA Takayuki
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Ohno Hideo
Department Of Chemistry Faculty Of Science Kyoto University
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Sawada Takayuki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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