Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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AMEMIYA Yoshihito
Department of Electrical Engineering, Hokkaido University
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Wu N‐j
Hokkaido Univ. Sapporo Jpn
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Wu N‐j
Univ. Aizu Fukushima Jpn
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Wu Nan-jian
The University Of Electro-communications
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Wu Nan-jian
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Hashizume Tamotsu
Department of Electrical Engineering, Hokkaido University
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Amemiya Yoshihito
Department Of Electrical Engineering Hokkaido University:research Center For Interface Quantum Elect
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Amemiya Yoshihito
Ntt Lsi Laboratories
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Amemiya Yoshihito
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Amemiya Y
Department Of Electrical Engineering Hokkaido University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Hashizume Tamotsu
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:(permanent Address)k
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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