AMEMIYA Yoshihito | Department of Electrical Engineering, Hokkaido University

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概要

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著作論文

An On-Chip PVT Compensation Technique with Current Monitoring Circuit for Low-Voltage CMOS Digital LSIs
High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair
Photon Position Detector Consisting of Single-Electron Devices
Ultralow-Power Current Reference Circuit with Low Temperature Dependence(Building Block, Analog Circuit and Device Technologies)
An On-Chip PVT Compensation Technique with Current Monitoring Circuit for Low-Voltage CMOS Digital LSIs
High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair
High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair
Low-Voltage Process-Compensated VCO with On-Chip Process Monitoring and Body-Biasing Circuit Techniques
A Highly Sensitive Thermosensing CMOS Circuit Based on Self-Biasing Circuit Technique
Threshold-Logic Devices Consisting of Subthreshold CMOS Circuits
CMOS Voltage Reference Based on the Threshold Voltage of a MOSFET
A CMOS Watchdog Sensor for Certifying the Quality of Various Perishables with a Wider Activation Energy(Selected Papers from the 18th Workshop on Circuits and Systems in Karuizawa)
A νMOS Vision Chip Based on Cellular-Automaton Processing
A υMOS Vision Chip Based on the Cellular-Automaton Processing
Cellular vMOS Circuits Performing Edge Detection with Difference-of-Gaussian Filters
Characteristics of Schottky Contacts on n-InP and n-GaAs by a Novel in situ Electrochemical Process
Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process
CMOS phase-shift oscillator using the conduction of heat(Session8A: Si Devices III)
CMOS phase-shift oscillator using the conduction of heat(Session8A: Si Devices III)
Reaction-Diffusion Devices Using Minority-Carrier Transport in Semiconductors
Quantum Cellular Automaton Device Using the Image Charge Effect
A vMOS Cellular-Automaton Device for Differential-of-Gaussian Filtering
Directional Single-Electron-Tunneling Junction
Properties of High Heat-Resistance μc-SiC_x:H Emitter Silicon HBT's
Silicon HBT with a Low-Resistivity Amorphous SiC_x Emitter
Single-Electron Logic Systems Based on a Graphical Representation of Digital Functions(Novel Device Architectures and System Integration Technologies)
Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram

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