Hasegawa Hideki | Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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概要
- Hasegawa Hidekiの詳細を見る
- 同名の論文著者
- Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japanの論文著者
関連著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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FUJIKURA Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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OKADA Hiroshi
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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藤倉 序章
北海道大学量子界面エレクトロニクス研究センター:電子情報工学専攻
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長谷川 英機
北海道大学量子集積エレクトロニクス研究センター
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Okada H
Botanical Gardens Faculty Of Science Osaka City University
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SATO Taketomo
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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OKADA HIROSHI
Botanical Gardens, Faculty of Science, Osaka City University
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Hasegawa Hideki
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:fac
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Fukui T
Research Center For Integrated Quantum Electronics Hokkaido University
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FUKUI Takashi
Research Center for Interface Quantum Electronics, Hokkaido University
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Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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ISHIKAWA Yasuhiko
Research Institute of Electronics, Shizuoka University
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Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hasegawa H
自治医科大学 臨床検査医学
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Jiang Chao
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Kasai S
Graduate School Of Environmental Earth Science Hokkaido University
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Honda Hideyuki
The Faculty Of Medical Science And Welfare Tohoku Bunka Gakuen University
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HANADA Yuuki
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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TAKAHASHI Hiroshi
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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MURANAKA Tsutomu
Research Center for Integrated Quantum Electronics, Hokkaido University
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JINUSHI Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Jinushi Kei-ichiroh
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hanada Yuuki
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Yoshida T
Department Of Electronic Engineering Faculty Of Engineering Takushoku University
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Yoshida Tomio
Information Equipment Research Laboratory Matsushita Electric Industrial Co. Ltd.
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YOSHIDA Toshiyuki
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Yoshida Tomoaki
Department Of Materials Science Faculty Of Engineering Tohoku University
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Yoshida Toshiyuki
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Yoshida T
Matsushita Electric Co. Tochigi Jpn
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Okada H
Faculty Of Engineering University Of Toyama
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Jiang C
Hokkaido Univ. Sapporo Jpn
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KIHARA Michio
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Satoh Y
Tokyo Inst. Technol. Tokyo Jpn
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Yoshida T
Fukuoka Univ. Fukuoka Jpn
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葛西 誠也
北海道大学大学院情報科学研究科・量子集積エレクトロニクス研究センター:jstさきがけ
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Ootomo Shinya
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Ootomo Shin-ya
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Electronics And In
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Kihara M
Kanagawa Univ. Yokohama Jpn
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Koyanagi S
Hokkaido Univ. Sapporo Jpn
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Kodama S
Ntt Photonics Lab. Kanagawa Jpn
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Hashizume T
Advanced Research Laboratory Hitachi Ltd.:department Of Physics Tokyo Institute Of Technology
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KANESHIRO Chinami
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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TSURUMI Naohiro
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Tsurumi Naohiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Kaneshiro Chinami
Kanagawa Institute Of Technology
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Hashizume Tamotsu
Hokkaido Polytechnic College
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Kaneshiro C
Kanagawa Institute Of Technology
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Jin Z
Ecole Polytechnique De Montreal Quebec Can
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HASHIZUME Tamotsu
Hokkaido University
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NEGORO Noboru
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Yamada M
Mitsubishi Electric Corp. Itami‐shi Jpn
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Kodama Satoshi
Research Institute Of Innovative Technology For The Earth
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Satoh Yoshihiro
Division of Pathology, Isehara Kyodo Hospital
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Ishikawa Fumitaro
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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YAMADA Masatsugu
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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Satoh Yoshihiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Satoh Yoshihiro
Mitsubishi Electric Corporation
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Kodama Satoshi
Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido
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Koyanagi Satoshi
Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido
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Tamai Isao
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Araki M
Nagoya Univ. Nagoya Jpn
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Sato T
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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JIN Zhi
Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University
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SAI Hironobu
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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ARAKI Moriaki
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Sai Hironobu
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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福井 孝志
北海道大学情報科学研究科および量子集積エレクトロニクス研究センター
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Wu N‐j
Hokkaido Univ. Sapporo Jpn
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notzel richard
日本電信電話株式会社光エレクトロニクス研究所
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Kubo M
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Wu N‐j
Univ. Aizu Fukushima Jpn
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Xie Y
Research Center For Interface Quantum Electronics (rciqe) And Graduate School Of Electronics And Inf
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Yang Bing
Research Center For Interface Quantum Electronics Hokkaido University
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Hashim Abdul
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Wu Nan-jian
The University Of Electro-communications
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Suzuki S
Nikon Corp. Tokyo Jpn
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Suzuki Setsuo
Energy And Mechanical Research Laboratories Research And Development Center Toshiba Corporation
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Kubo Masahiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Suzuki S
Chiba Institute Of Technology
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Suzuki Suguru
Department Of Materials Science And Engineering Nagoya Institute Of Technology
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Notzel Richard
Ntt Opto-electronics Laboratories
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SUZUKI Satoshi
Research Institute of Angiocardiology and Cardiovascular Clinic,Faculty of Medicine,Kyushu Universit
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TEMMYO Jiro
Photonic Devices Laboratory, Research Institute of Electronics, Shizuoka University
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Yang Bing
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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HARTNAGEL Hans
Institut fur Hochfrequenztechnik, Fachbereich Elektrotechnik und Informationstechnik, TU Darmstadt
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Endo Makoto
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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MOTOHISA Junichi
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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KUMAKURA Kazuhide
Research Center for Interface Quantum Electronics, Hokkaido University
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Kishida Motoya
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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TAMAMURA Toshiaki
NTT Opto-electronics Laboratories 3-1
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Noetzel R
Ntt 光エレクトロニクス研
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TOMOZAWA Hidemasa
Eniwa Research and Development Center, Kyoto Semiconductor Corporation
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Suzuki Susumu
Chiba Institute Of Technology
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Fukui Takashi
Research Center For Interface Quantum Electronics Hokkaido University
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NOTZEL Richard
Research Center for Interface Quantum Electronics, Hokkaido University
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TEMMYO Jiro
NTT Opto-electronics Laboratories
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Nakano Yoshitaka
Toyota Central Research And Development Laboratories Inc.:department Of Environmental Technology And
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Tomozawa Hidemasa
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Tomozawa Hidemasa
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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ENDO Masahiro
NTT Cyber Space Laboratories, NTT Corporation
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SAWADA Takayuki
Research Center for Interface Quantum Electronics, Hokkaido University
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Koyama Yuji
Research Center For Interface Quantum Electronics (rciqe) And Graduate School Of Electronics And Inf
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Temmyo Jiro
Photonic Devices Laboratory Research Institute Of Electronics Shizuoka University
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Kubo M
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Uno Shouichi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Kishida Motoya
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:(pr
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Hartnagel H
Th Darmstadt Darmstadt Deu
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Hartnagel Hans
Institut Fur Hochfrequenztechnik Fachbereich Elektrotechnik Und Informationstechnik Tu Darmstadt
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Suzuki S
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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HIRAMA Atsushi
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Notzel Richard
Paul‐drude‐inst. Festkoerperelektronik Berlin Deu
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OIKAWA Takeshi
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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NAKANO Yuuta
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Informatio
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TAMAMURA Toshiaki
NTT Electronics
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DOHMAE Yasuhiro
Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Informatio
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YUMOTO Miki
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Informatio
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IKEYA Kengo
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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葛西 誠也
北海道大学大学院情報科学研究科
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HASHIZUME Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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ANANTATHANASARN Sanguan
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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小間 篤
Department Of Chemistry The University Of Tokyo
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長谷川 英機
北海道大学工学部電気工学科
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Hozawa H
Department Of Biomedical Engineering Graduate School Of Biomedical Engineering Tohoku University
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KIMURA Takeshi
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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AMEMIYA Yoshihito
Department of Electrical Engineering, Hokkaido University
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TAMURA Takahiro
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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Yang B
Hokkaido Univ. Sapporo Jpn
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Sakai T
Tokyo Inst. Technol. Kanagawa Jpn
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Liu Aimin
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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葛西 誠也
北海道大学大学院情報科学研究科:北海道大学量子集積エレクトロニクス研究センター:jstさきがけ
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Nakamura Jin
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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SAITOH Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University
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Wu Nan-jian
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Sato Taketomo
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Sakai Tomohiro
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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NAKASAKI Ryuusuke
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and In
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OYAMA Susumu
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and In
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OZEKI Tsuyoshi
Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Informatio
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Ishikawa Fumitaro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ito Akira
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Sakai T
Dainippon Screen Manufacturing Co. Ltd. Kyoto Jpn
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Ozeki Tsuyoshi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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NAKAKOSHI Kazuaki
Research Center for Interface Quantum Electronics, Hokkaido University
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Yamazaki Takahiro
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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Wada Kazumi
NTT LSI Laboratories
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GOTO Shu
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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ISHIZAKI Jun-ya
Research Center for Interface Quantum Electronics, Hokkaido University
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HAMAMATSU Akihito
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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XIE Yong
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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XIE Yong-Gui
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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JIANG Chao
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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GOTO Shigeo
Central Research Laboratory, Hitachi Ltd.
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TAKEUCHI Mariko
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Takeuchi Mariko
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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IWAYA Masanobu
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Iwaya Masanobu
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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KOZEN Atsuo
NTT Opto-electronics Laboratories
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KAKUMU Takaaki
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Informatio
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WU Nan-Jian
Research Center for Interface Quantum Electronics, Hokkaido University
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Takahasi Hiroshi
The Authors Are With Application Specific Products Worldwide Development Dsp Development Japan Tsuku
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Hasegawa Haruhiro
Superconductivity Research Laboratory International Superconductivity Technology Center
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Amemiya Yoshihito
Department Of Electrical Engineering Hokkaido University:research Center For Interface Quantum Elect
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Amemiya Yoshihito
Ntt Lsi Laboratories
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Amemiya Yoshihito
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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SAKAI Takamasa
Dainippon Screen Manufacturing Co., Ltd.
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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NUMATA Kei-ich
(Present address) Microelectronics Research Laboratories, NEC Corporation
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TOHDOH Susumu
Research Center for Interface Quantum Electronics, Hokkaido University
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JINUSHI Keiichiro
Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido
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Goto S
Central Research Laboratory Hitachi Ltd.
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Tohdoh Susumu
Research Center For Interface Quantum Electronics Hokkaido University
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Numata Kei-ich
(present Address) Microelectronics Research Laboratories Nec Corporation
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Saitoh Toshiya
Research Center For Interface Quantum Electronics Hokkaido University
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Ishizaki Jun-ya
Research Center For Interface Quantum Electronics Hokkaido University
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FU Zhengwen
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Informatio
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Kimura Takeshi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Jia Rui
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Sato Taketomo
Hokkaido Univ. Sapporo Jpn
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Fu Zhengwen
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Amemiya Y
Department Of Electrical Engineering Hokkaido University
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Kasai Seiya
Research Center For Interface Quantum Electronics And Graduate School Of Engineering Hokkaido Univer
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Sakai T
Laboratory Of Plant Cell Biochemistry Department Of Applied Plant Science Division Of Life Science G
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TAMAURA Takahiro
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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葛西 誠也
北海道大学 大学院情報科学研究科
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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葛西 誠也
北大院情報科学および量集センター:jstさきがけ
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XIONG Yi-Ming
Division of Electronic and Information Engineering, Tokyo University of Agriculture and Technology
著作論文
- Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress(Plenary,Heterostructure Microelectronics with TWHM2005)
- Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al_2O_3 Insulated Gate(Heterostructure Microelectronics with TWHM2003)
- Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiN_χ Film(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Nitridation of GaP(100)Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma
- Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma
- Scanning Tunneling Microscope Study of (001)InP Surface Prepared by Gas Source Molecular Beam Epitaxy
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
- Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
- Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
- Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
- Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on(001)InP Surfaces and Their Photoluminescence Characterizations
- Process Charactarization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer
- Effects of Phosphorus Pressure on Growth Rate and Layer Quality of InP Grown by Gas Source Molecular Beam Epitaxy
- Large Conductance Modulation in Interdigital Gate HEMT Device due to Surface Plasma Wave Interactions and Its Device Application
- Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes
- The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process
- Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
- In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
- In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface
- Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2×4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy
- Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)Inp Surfaces Studied by UHV Scanning Tunneling Microscope
- Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors
- Ordered Quantum Dots : A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces
- Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates
- Characteristics of Schottky Contacts on n-InP and n-GaAs by a Novel in situ Electrochemical Process
- Formation of Oxide-Free Nearly Ideal Pt/GaAs Schottky Barriers by Novel In Situ Photopulse - Assisted Electrochemical Process
- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process
- Non-Destructive Characterization of Electronic Properties of Pre- and Post-Processing Silicon Surfaces by UHV Contactless Capacitance-Voltage Method
- In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy
- Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
- Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates
- Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
- Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG
- Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas
- Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas
- Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K
- Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process
- Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs
- Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer
- In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2
- Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well
- Fabrication and Characterization of Novel Oxide-Free InP MISFETs Having an Ultra-Narrow Si Surface Quantum Well
- Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods
- Electronic Interface Properties of Low Temperature Ultrathin Oxides on Si(111) Surfaces Studied by Contactless Capacitance-Voltage and Photoluminescence Methods
- Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity
- Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_Ga_P on GaAs
- Control of Dot Size and Tunneling Barrier Profile in In_Ga_As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates
- Gas-Source Molecular Beam Epitaxial Growth of In_Ga_xP on GaAs Using Tertiarybutylphosphine
- Controlled Formation of Narrow and Uniform InP-Based In_Ga_As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy
- Controlled Formation of Narrow and Uniform InGaAs Ridge Quantum Wire Arrays on Patterned InP Substrates by Selective Molecular Beam Epitaxy
- RHEED Oscillation-Based Optimization of Growth Conditions for Gas-Source MBE Growth of InGaP Using Tertiarybutylphosphine
- Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires ( Quantum Dot Structures)
- Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy ( Quantum Dot Structures)
- Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires having Silicon Interlayer-Based Edge Passivation and Its Interpretation
- Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001)InP Substrates
- Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
- Excitation Power Dependent Photoluminescence Characterization and Successful Edge Passivation of Etched InGaAs Quantum Wires Formed by Electron Beam Lithography
- DLTS, PL and CL Study of Dominant Deep Level and Its Removal in InGaP/GaAs Heterostructure Grown by TBP-Based GSMBE
- Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits
- Investigation of Side-gating Effects in GaAs-based Quantum Wire Transistor (QWRTr) utilizing Nanosized Schottky Gates
- Cross-Sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates
- Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted Selective MBE on Pre-Patterned Substrates
- Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4 × 6) Reconstruction
- Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4x6) Reconstruction
- Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors
- Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitors Having Silicon Interface Control Layer
- Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer
- Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures
- Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires
- Reactive Ion Beam Etching of GaN and AlGaN for Nano-structure Fabrication Using Methane-Based Gas Mixtures
- A Novel GaAs Binary Decision Diagram Device Having Quantum Wire Branch-Switches Controlled by Wrap Gates
- Successful Passivation of Air-Exposed AlGaAs Surfaces by a Silicon Interface Control Layer-Based Technique
- Photoluminescence and X-Ray Photoelectron Study of AlGaAs/GaAs Near-Surface Quantum Wells Passivated by a Novel Interface Control Technique
- More than 10^3 Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells
- Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics
- Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process
- Large Modulation of Conductance in Interdigital-Gated HEMT Devices Due to Surface Plasma Wave Interactions
- Structural and Optical Properties of InGaAs Ridge Quantum Wire Arrays with Sub-micron Pitches Grown by Selective MBE on InP Substrates
- Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires With Nanometer Wire Widths and Submicron Wire Pitches on Patterned InP Substrates
- Structural and Optical Properties of 10nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate
- Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective Molecular Beam Epitaxial Growth of InGaAs Quantum Structure Arrays
- Ridge Uniformity Improvement Toward Growth of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP Substrate
- In Situ X-Ray Photoelectron Spectroscopy Study of Etch Chemistry of Methane-Based Reactive Ion Beam Etching of InP Using N2
- Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System
- In-Situ UHV Study on Correlation between Microscopic Surface Structures and Macroscopic Electronic Properties in Si Interlayer-Based Surface Passivation of GaAs
- Large Schottky Barrier Heights ort Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process
- Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism
- Properties of Metal-Semiconductor Interfaces Formed on n-Type GaN
- Interface Properties of Metal/n-GaN Schottky Contacts
- Annealing Behavior of HF-Treated GaAs Capped with SiO_2 Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition
- Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP
- Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001)InP Substrates by Selective Molecular Beam Epitaxy
- A Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
- Contactless Characterization of Thermally Oxidized, Air-Exposed and Hydrogen-Terminated Silicon Surfaces by Capacitance-Voltage and Photoluminescence Methods
- Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
- Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique
- Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal Binary Decision Diagram Quantum Circuits
- Determination of Built-In Electric Field Strength in InP/n^+-InP Structures Using Photoellipsometry
- Observation of Coulomb Blockade Oscillations up to 50K from InP-Based InGaAs Quantum Wires Grown by Molecular Beam Epitaxy
- Transport Characterization of Schottky In-Plane Gate Al_Ga_As/GaAs Quantum Wire Transistors Realized by In-Situ Electrochemical Process
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
- Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates
- Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors
- Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutylphosphine-Based Gas Source Molecular Beam Epitaxy
- Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
- Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate
- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process
- Photoluminescence and Cathodoluminescence Investigation of Optical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molecular Beam Epitaxy
- Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K
- Controlled Formation of Narrow and Uniform InP-Based In0.53Ga0.47As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy
- Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors
- GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots
- Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
- Dominant Electron Trap with Metastable State in Molecular Beam Epitaxial GaAs Grown at Low Temperatures
- Metastable Properties of the Dominant Electron Trap in Low-Temperature GaAs Grown by Molecular Beam Epitaxy