ANANTATHANASARN Sanguan | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
スポンサーリンク
概要
関連著者
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ANANTATHANASARN Sanguan
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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NEGORO Noboru
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University
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HASHIZUME Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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KUMAKURA Kazuhide
NTT Basic Research Laboratories, NTT Corporation
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan
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Negoro Noboru
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Hashizume Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
著作論文
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers