Makimoto Toshiki | Ntt Basic Laboratories Ntt Corporation
スポンサーリンク
概要
関連著者
-
Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
-
MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
-
Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
-
Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
-
Makimoto T
Ntt Basic Research Laboratories
-
KOBAYASHI Naoki
NTT Basic Research Laboratories
-
KUMAKURA Kazuhide
NTT Basic Research Laboratories, NTT Corporation
-
Kasu Makoto
Ntt Basic Research Laboratories
-
Akasaka Tetsuya
NTT Basic Research Laboratories
-
Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
-
HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
-
Akasaka Tetsuya
Ntt Basic Research Laboratories Ntt Corporation
-
Kumakura Kazuhide
Ntt Basic Research Laboratories Ntt Corporation
-
Kobayashi Yasuyuki
Ntt Basic Research Laboratories
-
HORIKOSHI Yoshiji
NTT Basic Research Laboratories
-
Maeda Narihiko
Ntt Photonics Laboratories Ntt Corporation
-
Yamauchi Yoshiharu
Ntt Basic Research Laboratories
-
KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
-
Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
-
Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit
-
Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
-
Horikoshi Y
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
-
Horikoshi Yoshiji
NTT Basic Reseach Laboratories
-
Kasu Makoto
Ntt Basic Research Laboratories Ntt Corporation
-
Yamauchi Yoshibumi
Deparment Of Electrical And Electronic Engineering Iwate University
-
SAITO Hisao
NTT Basic Research Laboratories
-
AKASAKA Tetsuya
NTT Basic Research Laboratories, NTT Corporation
-
MATSUMOTO Nobuo
Shonan Institute of Technology
-
Yamauchi Y
Shizuoka Inst. Sci. And Technol. Fukuroi Jpn
-
Wang Chengxin
Ntt Photonics Laboratories Ntt Corporation
-
Nishikawa Atsushi
Ntt Basic Research Laboratories Ntt Corporation
-
YAMAUCHI Yoshiharu
NTT Basic Research Laboratories, NTT Corporation
-
Taniyasu Yoshitaka
Ntt Basic Research Laboratories Ntt Corporation
-
Kobayashi T
Ntt Corp. Kanagawa Jpn
-
KOBAYASHI Yasuyuki
NTT Basic Research Laboratories, NTT Corporation
-
MAEDA Narihiko
NTT Photonics Laboratories, NTT Corporation
-
HIROKI Masanobu
NTT Photonics Laboratories, NTT Corporation
-
Maeda Narihiko
Ntt Corp. Atsugi‐shi Jpn
-
Maeda Narihiko
Institute For Solid State Physics University Of Tokyo
-
KIDO Takatoshi
Shonan Institute of Technology
-
Enoki Takatomo
Ntt Photonics Laboratories
-
WANG Chengxin
NTT Photonics Laboratories, NTT Corporation
-
Makimoto Toshiki
Ntt Corp. Kanagawa Jpn
-
Makimura Takashi
Ntt Basic Research Laboratories Ntt Corporation
-
Kumakura K
Ntt Basic Research Laboratories
-
Tawara Takehiko
Ntt Basic Res. Lab. Kanagawa Jpn
-
Kasu M
Ntt Corp. Atsugi Jpn
-
Onomitsu Koji
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
-
Saito Hironobu
Fukushima Toyo Communication Equipment Co. Ltd.
-
TANIYASU Yoshitaka
NTT Basic Research Laboratories, NTT Corporation
-
ENOKI Takatomo
NTT Photonics Laboratories, NTT Corporation
-
Okabe Takehito
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
-
Saito H
Nec Corp. Ibaraki Jpn
-
MAKIMURA Takashi
NTT Photonics Laboratories, NTT Corporation
-
ENOKI Takotomo
NTT Photonics Laboratories, NTT Corporation
-
SAITO Hideaki
Laser Laboratory, Second Research Center, TRDI, Japan Defense Agency
-
Gotoh Hideki
Ntt Basic Research Laboratories
-
Makimura Takashi
Ntt Photonics Laboratories Ntt Corporation
-
Ueda Kenji
Ntt Basic Research Laboratories Ntt Corporation
-
Nakano Hidetoshi
Ntt Basic Research Laboratories
-
Makimura Takashi
NTT Photonics Laboratories
-
Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
SATO Hisashi
NTT Basic Research Laboratories
-
Hibino Hiroki
Ntt Basic Research Laboratories
-
YAMAUCHI Yoshiharu
NEL TechnoSupport
-
NAKAMURA Tomohiro
Shonan Institute of Technology
-
BENCHIMOL Jean
NTT Basic Research Laboratories
-
Horikoshi Yoshiji
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
-
Benchimol J.l.
Ntt Basic Research Laboratories:france Telecom Cnet Bagneux Laboratories
-
Okabe T
Faculty Of Engineering Daido Institute Of Technology
-
Yamamoto Hideki
Ntt Basic Research Laboratories
-
TAWARA Takehiko
NTT Basic Research Laboratories, NTT Corporation
-
Kobayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
-
Karimoto Shin-ichi
Ntt Basic Research Laboratories
-
Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
-
Saito H
Ntt Basic Research Laboratories
-
Nakano Hidetoshi
Ntt Basic Research Laboratories Ntt Corporation
-
Nakano Hidetoshi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corp.
-
Makimoto Toshiki
Ntt Basic Research Laboratories Ntt Corporation
-
Tawara Takehiko
Ntt Basic Research Laboratories Ntt Corporation
-
Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Kasu Makoto
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
ANANTATHANASARN Sanguan
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
-
NEGORO Noboru
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
-
HIBINO Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
-
Kubovic Michal
Department Of Electron Devices And Circuits University Of Ulm
-
WATANABE Noriyuki
NTT Photonics Laboratories
-
ISHIBASHI Tadao
NTT LSI Laboratories
-
ALEKSOV Aleksandar
Department of Electron Devices and Circuits , University of Ulm
-
KOHN Erhard
Department of Electron Devices and Circuits , University of Ulm
-
Gotoh Hideki
Ntt Basic Research Laboratories Ntt Corporation
-
Hibino Hiroki
Ntt Basic Research Laboratories Ntt Corporation
-
HORIKOSHI Yoshiji
School of Science and Engineering, Waseda University
-
Saito Shiro
NTT Basic Research Laboratories
-
Semba Kouichi
NTT Basic Research Laboratories
-
YOKOYAMA Haruki
NTT Photonics Laboratories, NTT Corporation
-
OKABE Takehito
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, W
-
RAMSTEINER Manfred
Paul Drude Institute
-
ZHU Hai-jun
Paul Drude Institute
-
KAWAHARAZUKA Atsushi
Paul Drude Institute
-
HORIKOSHI Yoshiji
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, W
-
KAWAHARAZUKA Atsushi
Department of Electrical, Electronics and Computer Engineering. School of Science and Engineering, W
-
ONOMITSU Koji
School of Science and Engineering, Waseda University
-
OKABE Takehito
School of Science and Engineering, Waseda University
-
KURISHIMA Kenji
NTT LSI Laboratories
-
Kobayashi Takashi
NTT LSI Laboratories
-
SAKU Tadashi
NTT Basic Research Laboratories
-
Horikoshi Yoshiji
School Of Science And Engineering Waseda University
-
Ploog Klaus
Paul Drude Institute
-
Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
-
Sauer Rolf
Department Of Semiconductor Physics University Of Ulm
-
Teofilov Nikolai
Department Of Semiconductor Physics University Of Ulm
-
SAITOH Tadashi
NTT Basic Research Laboratories, Physical Science Laboratory
-
WANG Chengxin
NTT Basic Research Laboratories, NTT Corporation
-
TSUBAKI Kotaro
Department of Electrical and Electronic Engineering, Toyo University
-
KOBAYASHI Naoki
The University of Electro-Communications, Department of Applied Physics and Chemistry
-
YAMAGUCHI Eiichi
NTT Basic Research Laboratories
-
Saku Tadashi
Ntt Basic Research Labs.
-
NAKANO Hidetoshi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corp.
-
Ishibashi T
Ulsi Development Center Mitsubishi Electric Co. Ltd.
-
Ishibashi T
Ntt Photonics Laboratories
-
MARUYAMA Takashi
NTT Advanced Technology Corporation
-
Karimoto Shin-ichi
Ntt Basic Research Laboratories Ntt Corporation
-
Yokoyama Haruki
Ntt Photonics Laboratories
-
Junnarkar Mahesh
NTT Basic Research Labs.
-
Naito Michio
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
-
Makimoto T
Ntt Corp. Atsugi Jpn
-
Makimoto Toshiki
Ntt Basic Research Laboratories
-
Makimoto Toshiki
Ntt Basic Research Labs.
-
Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
-
Kawaharazuka Atsushi
Department Of Electrical Electronics And Computer Engineering. School Of Science And Engineering Was
-
Sato Hisashi
Ntt Basic Research Laboratories Ntt Corporation
-
CHANG Shi
NTT Basic Research Laboratories
-
Junnarkar Mahesh
Ntt Basic Research Laboratories
-
Yamaguchi Eiichi
Ntt Basic Research Labs.
-
Saitoh Tadashi
Ntt Basic Research Laboratories
-
Maruyama Takashi
Ntt Access Network Service Systems Laboratories Ntt Corporation
-
Sasaki Satoshi
Ntt Basic Research Laboratories
-
Kumakura Kazuhide
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Kobayashi Naoki
Depertment of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo, Japan
-
Hibino Hiroki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Sauer Rolf
Department of Semiconductor Physics, University of Ulm, Albert-Einstein Allee 45, D-89069 Ulm, Germany
-
Kawaharazuka Atsushi
Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin, Germany
-
Kohn Erhard
Department of Electron Devices and Circuits, University of Ulm, Albert-Einstein Allee 45, D-89081 Ulm, Germany
-
Teofilov Nikolai
Department of Semiconductor Physics, University of Ulm, Albert-Einstein Allee 45, D-89069 Ulm, Germany
-
Naito Michio
Department of Applied Physics, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
-
Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
-
Tsubaki Kotaro
Department of Electrical and Electronic Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan
-
Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
-
Zhu Hai-jun
Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin, Germany
-
Maeda Narihiko
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
-
Maeda Narihiko
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Ye Haitao
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Ueda Kenji
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi 243-0198, Japan
-
Makimoto Toshiki
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0124, Japan
-
Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan
-
Makimoto Toshiki
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan
-
Kobayashi Yasuyuki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Kubovic Michal
Department of Electron Devices and Circuits , University of Ulm
-
Ploog Klaus
Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin, Germany
-
Kubovic Michal
Department of Electron Devices and Circuits, University of Ulm, Albert-Einstein Allee 45, D-89081 Ulm, Germany
-
Aleksov Aleksandar
Department of Electron Devices and Circuits, University of Ulm, Albert-Einstein Allee 45, D-89081 Ulm, Germany
-
Yamauchi Yoshiharu
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Tawara Takehiko
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
-
Tawara Takehiko
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Taniyasu Yoshitaka
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Yokoyama Haruki
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Enoki Takotomo
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
-
Semba Kouichi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Matsumoto Nobuo
Shonan Institute of Technology, 1-1-25 Tsujidonishikaigan, Fujisawa, Kanagawa 251-8511, Japan
-
Matsumoto Nobuo
Shonan Institute of Technology, 1-1-25 Nishi-Kaigan Tsujido, Fujisawa, Kanagawa 251-8511, Japan
-
Negoro Noboru
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
-
Hiroki Masanobu
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
-
Wang Chengxin
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Wang Chengxin
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
-
SAITOH Tadashi
NTT Basic Research Laboratories, NTT Corporation
-
Akasaka Tetsuya
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Hashizume Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
-
Makimōto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Okabe Takehito
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
-
Sasaki Satoshi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Akasaka Tetsuya
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Kumakura Kazuhide
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
-
Karimoto Shin-ichi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Wakamiya-Morinosato, Atsugi, Kanagawa 243-0198, Japan
-
Kobayashi Naoki
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan
-
Kobayashi Yasuyuki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Onomitsu Koji
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
-
Nakano Hidetoshi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
著作論文
- Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Carbom Atomic Layer Doping in AlGaAs by Metalorganic Chemical VaporDeposition and Its Application to a P-Type Modulation Doped Structure
- Carbon Modulation-Doped P-AlGaAs/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
- Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
- Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
- High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
- GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
- Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
- 27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes
- p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
- Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
- Ohmic Contact to p-GaN Using a Strained Layer and Its Thermal Stability
- Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
- Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
- Growth of Boron Nitride on 6H–SiC Substrate by Flow-Rate Modulation Epitaxy
- Common - Emitter Current - Voltage Characteristics of Pnp AlGaN/GaN Heterojunction Bipolar Transistors
- High-Temperature Operation Over 500℃ of Pnp AlGaN/GaN HBTs
- Flow-rate modulation epitaxy of wurtzite AlBN
- Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors with Low-Base-Resistance (
- Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa_2Cu_3O_ Thin Films
- High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition
- Growth of Boron Nitride on 6H-SiC Substrate by Flow-rate Modulation Epitaxy
- InGaN quantum wells with small potential fluctuation
- p^+ -n^+ GaAs Tunnel Junction Diodes Grown by Flow-Rate Modulation Epitaxy
- High-Temperature Characteristics of AlxGa1-xN-Based Vertical Conducting Diodes
- High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN $ p$–$i$–$n$ Vertical Conducting Diode on $n$-SiC Substrate
- BGaN Micro-Islands as Novel Buffers for GaN Hetero-Epitaxy
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
- Interface Microstructure of MgB2/Al–AlOx/MgB2 Josephson Junctions Studied by Cross-Sectional Transmission Electron Microscopy
- RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
- Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
- Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
- Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
- Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
- Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- $ p$-InGaN/$n$-GaN Vertical Conducting Diodes on $n^{+}$-SiC Substrate for High Power Electronic Device Applications
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Ohmic Contact to $p$-GaN Using a Strained InGaN Contact Layer and Its Thermal Stability
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Low-Temperature Growth of MgB2 Thin films with $T_{\text{c}}$ above 38 K
- Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors With Low-Base-Resistance ($
- Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa2Cu3O7-δ Thin Films