Kobayashi N | The University Of Electro-communications Department Of Applied Physics And Chemistry

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概要

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著作論文

Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
In-Situ STM Observation of GaAs Surfaces after Nitridation
In-Situ STM Observation of GaAs Surfaces after Nitridation
Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy
Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
Short-Cavity Fabry-Perot Lasers Using Crystal Facets
Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
Triangular-Facet Lasers Coupled by a Rectangular Optical Waveguide
Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
In Situ Monitoring of Adsorption and Desorption of Atomic Nitrogen on GaAs (001) and (111)A Surfaces
Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
Theoretical Study of Silicon Adatom Transfer from the Silicon Surface in Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
Theoretical Study of Current and Barrier Height between Alurninum Tip and Silicon Surface in Scanning Tunneling Microscopy

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