Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Saito Hironobu

  Fukushima Toyo Communication Equipment Co. Ltd.

• SAITO Hisao

  NTT Basic Research Laboratories

• KOBAYASHI Naoki

  NTT Basic Research Laboratories

• Kobayashi N

  The University Of Electro-communications Department Of Applied Physics And Chemistry

• Saito H

  Nec Corp. Ibaraki Jpn

• SAITO Hideaki

  Laser Laboratory, Second Research Center, TRDI, Japan Defense Agency

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Makimoto T

  Ntt Basic Research Laboratories

• Kobayashi Naoki

  Ntt Basic Laboratories Ntt Corporation

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