Formation of a 100-μm-wide Stepfree GaAs (111)B Surface Obtained by Finite Area Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
To perfectly flatten crystal facets, we propose a procedure that utilizes the balance between growth-material supply and desorption. By the suppression of two dimensional nucleation due to this desorption balance, stepfree facets can be obtained however large their area becomes, as long as their size is finite. We also confirm the validity of this assumption by obtaining a 100-μm-wide atomically stepfree surface on a GaAs (111)B substrate by using metalorganic vapor phase epitaxy.
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Nishida Toshio
Ntt Basic Research Laboratories Physical Science Laboratory
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Nishida Toshio
Ntt Basic Research Laboratories
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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