KOBAYASHI Naoki | NTT Basic Research Laboratories

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• 同名の論文著者
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関連著者

• KOBAYASHI Naoki

  NTT Basic Research Laboratories

• Kobayashi Naoki

  Ntt Basic Laboratories Ntt Corporation

• Kobayashi N

  The University Of Electro-communications Department Of Applied Physics And Chemistry

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Makimoto T

  Ntt Basic Research Laboratories

• Yamauchi Yoshiharu

  Ntt Basic Research Laboratories

• Nishida Toshio

  Ntt Basic Research Laboratories

• Kobayashi Yasuyuki

  Ntt Basic Research Laboratories

• YAMAUCHI Yoshiharu

  NTT Basic Research Laboratories, NTT Corporation

• Yamauchi Yoshibumi

  Deparment Of Electrical And Electronic Engineering Iwate University

• Yamauchi Y

  Shizuoka Inst. Sci. And Technol. Fukuroi Jpn

• Nishida Toshio

  Ntt Basic Research Laboratories Physical Science Laboratory

• ANDO Seigo

  NTT Basic Research Laboratories

• UWAI Kunihiko

  NTT Basic Research Laboratories

• Uwai K

  Ntt Basic Research Laboratories

• Nishida T

  Ntt Basic Res. Lab. Kanagawa Jpn

• Nishida T

  Nara Inst. Sci. And Technol. Nara Jpn

• HORIKOSHI Yoshiji

  NTT Basic Research Laboratories

• SAITO Hisao

  NTT Basic Research Laboratories

• Nishida T

  Nara Inst. Sci. And Technol. (naist) Nara Jpn

• Nishida T

  Ntt Basic Research Laboratories

• Kobayashi Yasuyuki

  Ntt Basic Research Laboratories Ntt Corporation

• Kumakura Kazuhide

  Ntt Basic Laboratories Ntt Corporation

• Horikoshi Yoshiji

  NTT Basic Reseach Laboratories

• KUMAKURA Kazuhide

  NTT Basic Research Laboratories, NTT Corporation

• Kasu Makoto

  Ntt Basic Research Laboratories Ntt Corporation

• Kasu Makoto

  Ntt Basic Research Laboratories

• Saito Hironobu

  Fukushima Toyo Communication Equipment Co. Ltd.

• KOBAYASHI Yasuyuki

  NTT Basic Research Laboratories, NTT Corporation

• HORIKOSHI Yoshiji

  NTT Electrical Communications Laboratories

• ANDO Hiroaki

  NTT Basic Research Laboratories

• Saito H

  Nec Corp. Ibaraki Jpn

• SAITO Hideaki

  Laser Laboratory, Second Research Center, TRDI, Japan Defense Agency

• Ando S

  Ntt Basic Research Laboratories

• Kumakura K

  Ntt Basic Research Laboratories

• Kobayashi Y

  Tokai Univ. Kanagawa Jpn

• Kobayashi Y

  Ntt Basic Research Lab. Kanagawa

• Kobayashi Y

  Matsushita Electric Industrial Co. Ltd. Kyoto Jpn

• AKASAKA Tetsuya

  NTT Basic Research Laboratories, NTT Corporation

• Kangawa Yoshihiro

  Department Of Applied Chemistry Tokyo University Of Agriculture And Technology

• Horikoshi Yoshiji

  Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit

• Horikoshi Yoshiji

  Ntt Electrial Communication Laboratories

• Kobayashi Y

  Department Of Nuclear Engineering Graduate School Of Engineering

• Horikoshi Y

  Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase

• Akasaka T

  Univ. Tsukuba Ibaraki Jpn

• Akasaka Tetsuya

  Ntt Basic Research Laboratories Ntt Corporation

• Akasaka Tetsuya

  NTT Basic Research Laboratories

• Kasu M

  Ntt Corp. Atsugi Jpn

• Maeda Narihiko

  Ntt Corp. Atsugi‐shi Jpn

• SAITOH Tadashi

  NTT Basic Research Laboratories, Physical Science Laboratory

• Ando H

  Ntt Basic Research Laboratories

• Saitoh Tadashi

  Ntt Basic Research Laboratories

• 椿 光太郎

  東洋大学工学部

• Maeda Narihiko

  Ntt Basic Research Laboratories

• Maeda Narihiko

  Institute For Solid State Physics University Of Tokyo

• Saitoh T

  Faculty Of Technology Tokyo University Of Agriculture And Technology

• Saitoh T

  Ntt Basic Research Laboratories Physical Science Laboratory

• BENCHIMOL Jean

  NTT Basic Research Laboratories

• Kobayashi Nobuhiko

  Depart. Dermatol. Nara Medical Univ.

• Benchimol J.l.

  Ntt Basic Research Laboratories:france Telecom Cnet Bagneux Laboratories

• Saitoh T

  Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt

• TSUBAKI Kotaro

  NTT Basic Research Laboratories, Physical Science Laboratory

• Hirose Kenji

  Nec Research Institute

• Tsukada Masaru

  Department Of Nano-science And Nano-technology Advanced School Of Science And Engineering Waseda Uni

• Tsubaki Kotaro

  NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Tsukada Masaru

  Department of Nano-Science and Nano-Engineering, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan

• 澤田 嗣郎

  東京大学

• 澤田 嗣郎

  東大院工

• Ono Naoki

  Ntt Human Interface Laboratories

• TANIYASU Yoshitaka

  NTT Basic Research Laboratories, NTT Corporation

• Tsuda Shinya

  R&d Headquarters Sanyo Electric Co. Ltd.

• MAEDA Narihiko

  NTT Photonics Laboratories, NTT Corporation

• HONDA Takashi

  NTT Basic Research Laboratories

• Taniyasu Yoshitaka

  Ntt Basic Research Laboratories Ntt Corporation

• WANG Chengxin

  NTT Basic Research Laboratories, NTT Corporation

• TSUBAKI Kotaro

  Department of Electrical and Electronic Engineering, Toyo University

• Scholz F

  Univ. Stuttgart Stuttgart Deu

• Wang H

  Ntt Basic Research Laboratories Ntt Corporation

• Kumagai Masami

  Ntt Basic Res. Labs.

• Kumagai Masami

  Ntt Basic Research Laboratories Ntt Corporation

• TAWARA Takehiko

  NTT Basic Research Laboratories, NTT Corporation

• Zhang Suian

  Ntt Basic Research Laboratories

• Wang Hailong

  Ntt Basic Research Laboratories Ntt Corporation

• Makimoto Toshiki

  Ntt Basic Research Laboratories

• Tawara Takehiko

  Ntt Basic Research Laboratories Ntt Corporation

• SCHOLZ Ferdinand

  NTT Basic Research Laboratories.

• Ishibashi Satoshi

  NTT

• ISHIBASHI Satoshi

  NTT Human Interface Laboratories

• KOBAYASHI Naoki

  NTT Human Interface Laboratories

• Yamauchi Yoshiharu

  Ntt Basic Research Laboratories Ntt Corporation

• HIROSE Kenji

  Fundamental and Environmental Research Laboratories, NEC Corporation

• Kobayashi Yasuyuki

  Ntt Basic Research Laboratories.

• Kobayashi N

  Ntt Basic Research Laboratories Ntt Corporation

• Saitoh Tadashi

  Ntt Basic Research Laboratories Ntt Corporation

• Kobayashi Naoki

  Ntt Basic Research Laboratories Ntt Corporation

• Kobayashi Naoki

  Ntt Basic Research Laboratories.

• Tawara Takehiko

  Ntt Basic Res. Lab. Kanagawa Jpn

• Kobayashi Naoki

  NTT Basic Research Laboratories, NTT Corporation

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著作論文

• Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
• Formation of Solid Solution of Al_Si_xN (0
• Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• Carbom Atomic Layer Doping in AlGaAs by Metalorganic Chemical VaporDeposition and Its Application to a P-Type Modulation Doped Structure
• Low-Temperature GaAs Metalorganic Chemical Vapor Deposition Using Dimethylamine Gallane and Arsine
• In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
• Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
• Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
• Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
• Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
• Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
• Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
• Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
• Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy
• Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
• Short-Cavity Fabry-Perot Lasers Using Crystal Facets
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
• Triangular-Facet Lasers Coupled by a Rectangular Optical Waveguide
• Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
• Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
• Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
• In Situ Monitoring of Adsorption and Desorption of Atomic Nitrogen on GaAs (001) and (111)A Surfaces
• Arsenic Coverages and Surface Structures of As-Stabilized GaAs (001) Surfaces during Metalorganic Chemical Vapor Deposition Observed by Reflectance Difference
• GaAs Quantum-Wire Laser Using Fractional Layer Superlattice
• In Situ Spectrum Observation of Ga Deposition Process during GaAs Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
• Spectral Observation of As-Stabilized GaAs Surfaces in Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
• In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
• Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
• Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
• Surface Morphology and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine and Trimethylgallium
• Formation of a 100-μm-wide Stepfree GaAs (111)B Surface Obtained by Finite Area Metalorganic Vapor Phase Epitaxy
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
• Using Tertiary Butylamine for Nitrogen Doping during Migration-Enhanced Epitaxial Growth of ZnSe
• Novel Design to Fabricate High Reflectivity GaN-Based Semiconductor/Air Distributed Bragg Reflector With the Tilt of Vertical Sidewall : Semiconductors
• Step-Free Surface Grown on GaAs (111)B Substrate by Local Metalorganic Vapor Phase Epitaxy
• Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
• Ohmic Contact to p-GaN Using a Strained Layer and Its Thermal Stability
• 4) Development of A Lossless Video Coding System Using Motion Compensation([マルチメディア情報処理研究会映像表現研究会ネットワ-ク映像メディア研究会画像情報システム研究会]合同)
• Hexagonal-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
• Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
• In-Situ Control of Strained Heterostructure Growth
• Anisotropic Oscillation Properties in Fractional-Superlattice Quantum Wire Lasers
• Step-Free Surface Grown on GaAs (111)B Substrate by Localized Area Metalorganic Vapor Phase Epitaxy
• Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy
• In Situ Interface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption
• As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption
• Growth-Rate Self-Limitation Mechanism in InP Atomic Layer Epitaxy Studied by Surface Photo-Absorption
• Pyrolysis of Organo-As Precursors Studied by Surface Photo-Absorption
• Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
• Decomposition Process of Alane and Gallane Compounds in Metal-Organic Chemical Vapor Deposition Studied by Surface Photo-Absorption
• High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition
• Increased Electrical Activity of Mg-Acceptors in Al_xGa_N/GaN Superlattices
• Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots
• Chemical Shift in Optical Reflection Spectra Observed During III-V Semiconductor Metalorganic Chemical Vapor Deposition Growth by Surface Photo-Absorption Method
• Theoretical Study of Silicon Adatom Transfer from the Silicon Surface in Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
• Theoretical Study of Current and Barrier Height between Alurninum Tip and Silicon Surface in Scanning Tunneling Microscopy
• Triangular-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition

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