Yamauchi Yoshibumi | Deparment Of Electrical And Electronic Engineering Iwate University
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概要
関連著者
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Yamauchi Yoshibumi
Deparment Of Electrical And Electronic Engineering Iwate University
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Yamauchi Y
Shizuoka Inst. Sci. And Technol. Fukuroi Jpn
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Yamauchi Yoshiharu
Ntt Basic Research Laboratories
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YAMAUCHI Yoshiharu
NTT Basic Research Laboratories, NTT Corporation
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Horikoshi Y
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Makimoto T
Ntt Basic Research Laboratories
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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UWAI Kunihiko
NTT Basic Research Laboratories
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Uwai K
Ntt Basic Research Laboratories
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山田 弘司
核融合科学研究所
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Fujiwara Tamiya
Department Of Electrical Engineering Faculty Of Engineering Iwate University
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FUJIWARA Takumi
Department of Applied Physics, Tohoku University
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Yamada Hiroshi
Department of Analytical Chemistry, Faculty of Pharmaceutical Sciences, Toho University
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Fujiwara Tamiya
Deparment Of Electrical And Electronic Engineering Iwate University
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Fujiwara T
Department Of Electrical Engineering Faculty Of Engineering Iwate University
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KUSANO Kazusa
Department of Electrical and Electronic Engineering, Iwate University
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YAMAUCHI Yoshibumi
Department of Electrical and Electronic Engineering, Iwate University
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Kusano K
Fukuoka Univ. Fukuoka Jpn
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Hamada Y
Nagoya Municipal Industrial Res. Inst. Nagoya Jpn
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Fujiwara T
Toyota Technological Inst. Nagoya Jpn
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Fujiwara Takumi
Department Of Applied Physics School Of Engineering Tohoku University
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Kusano Kazusa
Deparment Of Electrical And Electronic Engineering Iwate University
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Fujiwara Takumi
Dep. Of Applied Physics Tohoku Univ.
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山田 啓文
京都大学工学研究科電子工学専攻
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Kimura Shingo
Department Of Physiology School Of Medicine Iwate Medical University
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Fujiwara T
Hitachi Ltd. Ibaraki Jpn
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Saito Hironobu
Fukushima Toyo Communication Equipment Co. Ltd.
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Kimura Shingo
Department Of Physics School Of General Education Iwate Medical University
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TAMADA Koji
Deparment of Electrical Engineering, Tokyo National College of Technology
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Tamada Koji
Deparment Of Electrical Engineering Tokyo National College Of Technology
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SAITO Hisao
NTT Basic Research Laboratories
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Kimura S
Ntt Photonics Lab. Kanagawa Jpn
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Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
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Kimura S
Central Research Laboratory Hitachi Ltd.
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Saito H
Nec Corp. Ibaraki Jpn
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SAITO Hideaki
Laser Laboratory, Second Research Center, TRDI, Japan Defense Agency
著作論文
- Electrical Breakdown Assisted by Shock Wave in Benzene
- Electrical Breakdown at the Falling Edge of Rectangular Pulse Voltage Curve in Cyclohexane under Nonuniform Field Configuration
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- In Situ Monitoring of Adsorption and Desorption of Atomic Nitrogen on GaAs (001) and (111)A Surfaces
- Arsenic Coverages and Surface Structures of As-Stabilized GaAs (001) Surfaces during Metalorganic Chemical Vapor Deposition Observed by Reflectance Difference
- In Situ Spectrum Observation of Ga Deposition Process during GaAs Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
- Spectral Observation of As-Stabilized GaAs Surfaces in Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
- In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter