Annealing Properties of Si-Atomic-Layer-Doped GaAs
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概要
- 論文の詳細を見る
Si-atomic-layer-doped GaAs layers are grown at 520℃ by flow-rate modulation epitaxy using a 1-s silane pulse. Carrier profiles are measured by the capacitance-voltage method before and after annealing at 700, 800, and 900℃. The sheet carrier concentration increases with the silane mole fraction, and saturates at about 3×10<12> cm^<-2>. The samples with saturated sheet carrier concentrations exhibit a distinct plateau at the top of the carrier concentration profile after annealing, while the samples with unsaturated sheet carrier concentrations show normal Gaussian-like broadening. The peak carrier concentration at the plateau of the annealed sample is found to be sensitive to annealing temperature, indicating that the carrier concentration is controlled by some thermodynamic limitation.
- 社団法人応用物理学会の論文
- 1989-10-20
著者
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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Yamauchi Yoshibumi
Deparment Of Electrical And Electronic Engineering Iwate University
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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YAMAUCHI Yoshiharu
NTT Basic Research Laboratories, NTT Corporation
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Horikoshi Y
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Yamauchi Y
Shizuoka Inst. Sci. And Technol. Fukuroi Jpn
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Makimoto T
Ntt Basic Research Laboratories
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Yamauchi Yoshiharu
Ntt Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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