RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
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概要
- 論文の詳細を見る
On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio∼3.8. We discuss these features in terms of the energy barrier between the gate metal and the two-dimensional hole channel and drift region below the gate.
- （社）電子情報通信学会の論文
- 2008-07-01
著者
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KAGESHIMA Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Kasu Makoto
Ntt Basic Research Laboratories Ntt Corporation
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Kasu Makoto
Ntt Basic Research Laboratories
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UEDA Kenji
NTT Basic Research Laboratories, NTT Corporation
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YAMAUCHI Yoshiharu
NTT Basic Research Laboratories, NTT Corporation
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Kageshima Hiroyuki
Ntt Basic Research Laboratories Ntt Corporation
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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Yamauchi Yoshiharu
Ntt Basic Research Laboratories
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Ueda Kenji
Ntt Basic Research Laboratories Ntt Corporation
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