Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-11-30

著者

• KAGESHIMA Hiroyuki

  NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation

• Shiraishi K

  Institute Of Physics University Of Tsukuba

• ITOH Kohei

  Department of Applied Physics and Physico-Informatics, Keio University

• Takahashi Y

  Ntt Basic Research Laboratories Ntt Cornoration

• TAKAHASHI Yasuo

  NTT Basic Research Laboratories, NTT Corporation

• Itoh K

  Department Of Applied Physics And Physico-informatics Keio University

• UEMATSU Masashi

  NTT Basic Research Laboratories, NTT Corporation

• SHIRAISHI Kenji

  Institute of Physics, University of Tsukuba

• KAGESHIMA Hiroyuki

  NTT LSI Laboratories

• FUKATSU Shigeto

  Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University

• Fukatsu Shigeto

  Department Of Applied Physics And Physico-informatics And Crest-jst Keio University

• Takahashi Y

  Department Of Applied Physics School Of Engineering Tohoku University

• Takahashi Yasuo

  The Tokyo Metropolitan Research Laboratory Of Public Health:graduate School Of Nutritional And Envir

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