Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-09-15

著者

• KAGESHIMA Hiroyuki

  NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation

• Shiraishi K

  Institute Of Physics University Of Tsukuba

• UEMATSU Masashi

  NTT Basic Research Laboratories, NTT Corporation

• SHIRAISHI Kenji

  NTT Basic Research Laboratories

• KAGESHIMA Hiroyuki

  NTT LSI Laboratories

• Kageshima Hiroyuki

  Ntt Basic Research Laboratories

• Uematsu Masashi

  Ntt Basic Research Laboratories

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