Electron Counting Monte Carlo Simulation of the Structural Change of the GaAs(001)-c (4×4) Surface during Ga Predeposition
スポンサーリンク
概要
- 論文の詳細を見る
An electron counting Monte Carlo (ECMC) simulation is performed to investigate the structural change of As-rich GaAs(001)-c(4×4) surfaces during Ga predeposition, incorporating the As desorption process as a function of Ga adatom coverage based on ab initio calculations. The ECMC simulation results indicate that predepositing 0.5 monolayers of Ga on the GaAs(001)-c(4×4) surface induces As desorption and reduces effective As coverage θ_<As> to 1.25, where four Ga dimers and two As dimers co-exist in the (4×4) surface unit cell used in this simulation. Subsequent equilibration of this surface changes its structure to (2×4)-like surface with θ_<As> = 0.75 and one As-dimer row and three missing As-dimer rows. These simulated results successfully give one possible interpretation to some puzzling questions in experimental results.
- 社団法人応用物理学会の論文
- 1998-03-01
著者
関連論文
- First-principles Study on the Stable Molecular Structures of Peptide Nanotubes
- Carbon in III-V Compounds: A Theoretical Approach
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
- Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
- Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
- Ferromagnetism in Semiconductor Dot Array
- Phenomenological Theory of Semiconductor Epitaxial Growth with Misfit-Dislocations
- A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
- A Method for Calculating Momentum Matrix Elements with Pseudopotentials
- Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
- First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
- Stable Microstructures on a GaAs(111)A Surface : the Smallest Unit for Epitaxial Growth
- Empirical Interatomic Potentials for Nitride Compound Semiconductors
- Reflectance Difference Spectra Calculations of GaAs(001) As- and Ga-rich Reconstruction Surface Structures
- Electric Field Induced Recombination Centers in GaAs
- Simple Criterion for Wurtzite-Zinc-Blende Polytypism in Semiconductors
- Theoretical Investigation of the Adsorption Behavior of Si Adatoms on GaAs (001)-(2×4) Surfaces
- Electron Counting Monte Carlo Simulation of the Structural Change of the GaAs(001)-c (4×4) Surface during Ga Predeposition
- A Theoretical Inverstigation of Stable Lattice Sites for In Adatoms on GaAs(001)-(2×4) Surface
- Theoretical Investigations of Adsorption Behavior on GaAs(001) Surfaces
- Valence Band Offsets of the In_xGa_As/GaAs Strained-Layer Superlattice
- First Principle Calculation of the DX-Center Ground-States in GaAs,Al_xGa_As Alloys and AlAs/GaAs Superlattices
- Theoretical Studies on Electronic Structures of Polypeptide Chains
- A Theoretical Investigation of Migration Potentials of Ga Adatorms near Step Edges on GaAs(001)-c(4 × 4) Surface
- A New Slab Model Approach for Electronic Structure Calculation of Polar Semiconductor Surface
- First-Principles Study on Electronic Structures of Protein Nanotubes
- Electronic Structures of Protein Nanotubes
- A Theoretical Investigation of Migration Potentials of Ga Adatoms near Kink and Step Edges on GaAs(001)-(2×4) Surface
- The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model