Theoretical Investigation of the Adsorption Behavior of Si Adatoms on GaAs (001)-(2×4) Surfaces
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We theoretically investigate the adsorption behavior of Si adatoms on GaAs (001)-(2×4) surfaces by ab initio calculations. The calculated results show that Si adatoms tend to be incorporated in the missing dimer trench when the Si coverage is small. Whereas favorable Si adsorption sites change from the missing dimer trench to the upper As dimers as Si coverage increases. This coverage dependence of Si adsorption sites is qualitatively consistent with recent experiments. Moreover, we comment on the mechanism that governs the adsorption behavior of Si adatoms on GaAs surfaces.
- 社団法人応用物理学会の論文
- 1998-10-15
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