Phenomenological Theory of Semiconductor Epitaxial Growth with Misfit-Dislocations

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-09-15

著者

• Takeda K

  Hitachi Ltd. Hitachi Research Laboratory

• Oyama N

  Plasma Research Center University Of Tsukuba

• OHTA Eiji

  Keio University

• OHTA Eiji

  Department of Material Science, Faculty of Science and Technology, Keio University

• TAKEDA Kyozaburo

  Department of Materials Science and Engineering, Waseda University

• SHIRAISHI Kenji

  NTT Basic Research Laboratories

• Takeda Kazuyuki

  Department Of Energy Conversion Kyushu University

• OHNO Takahisa

  National Institute for Materials Science (NIMS)

• Ohta E

  Keio University

• Ohta Eiji

  Department Of Agricultural Chemistry Faculty Of Agriculture Kyoto University

• Ohno T

  National Research Institute For Metals

• Ohno Takahisa

  National Institute For Materials Science

• Ohno Takahisa

  Computational Materials Science Center National Institute For Materials Science

• Ohno Takahisa

  National Research Institute For Metals

• Oyama Norihisa

  Department Of Applied Physics And Phisico-infomatics Keio University

• OKAJIMA Ko

  Department of Materials Science and Engineering, Waseda University

• Okajima Ko

  Department Of Materials Science And Engineering Waseda University

• Ohno Takahisa

  First Principles Simulation Group Computational Materials Science Center National Institute For Mate

• Takeda Kyozaburo

  Department Of Materials Science And Engineering School Of Science And Engineering Waseda University

• Ohno Takahisa

  Science University Of Tokyo

• Takeda Kyozaburo

  Department of Electrical Engineering and Bioscience, Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan

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