Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-11-15

著者

• KAGESHIMA Hiroyuki

  NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation

• Shiraishi K

  Institute Of Physics University Of Tsukuba

• UEMATSU Masashi

  NTT Basic Research Laboratories, NTT Corporation

• SHIRAISHI Kenji

  NTT Basic Research Laboratories

• KAGESHIMA Hiroyuki

  NTT LSI Laboratories

• Kageshima Hiroyuki

  Ntt Basic Research Laboratories

• Uematsu M

  Ntt Basic Research Laboratories Ntt Corporation

• Uematsu Masashi

  Ntt Basic Research Laboratories

• Shiraishi K

  Institute Of Physics Tsukuba University

• Shiraishi K

  Japan Atomic Energy Res. Inst. Gunma Jpn

• Uematsu Masaya

  NTT Basic Research Laboratories, NTT Corporation

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