Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-07-15

著者

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• WEI Long

  Institute of Materials Science, University of Tsukuba

• Wei Long

  Institute Of Materials Science University Of Tsukuba

• Maezawa Koichi

  Ntt Lsi Laboratories

• UEMATSU Masashi

  NTT LSI Laboratories

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Uematsu M

  Ntt Basic Research Laboratories Ntt Corporation

• Uematsu Masaya

  NTT Basic Research Laboratories, NTT Corporation

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