Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1996-09-01
著者
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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KAWANO Takao
Radioisotope Center,University of Tsukuba
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Ikari Atsushi
Kimura Metamelt Project Erato Jrdc:(present Address) Advanced Technology Research Laboratories Nippo
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Ikari Atsushi
Advanced Technology Research Laboratories Nippon Steel Corporation
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Kawano T
Osaka Univ. Osaka Jpn
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Moriya T
Institute Of Material Science University Of Tsukuba
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MORIYA Tsuyoshi
Institute of Materials Science, University of Tsukuba
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KOMURO Naoyuki
Institute of Materials Science, University of Tsukuba
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Moriya T
Tokyo Metropolitan University Graduate School Of Engineering
関連論文
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- Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
- エタノール水溶液中の微量のメタノール, イソバレルアルデヒド, ジアセチルの減圧気液平衡
- Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Influence of Atmosphere on Molten Silicon Density
- Temperature Dependence of the Electrical Resistivity of Molten Silicon
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals
- Fabrication of Dye-Dispersed Optical-Quality Polymer Films by Coprecipitation of Cyanine Dye with Polymers
- Anomalous Association of 3, 3' -Diethyloxadicarbocyanine Iodide in Saturated Solutions of Acetone and Water
- Fabrication of Dye Dissolved Polymer Film Using Thermal Treatment under Ultra High Vacuum
- Noncrystalline Condensation of Densely Dissolved Optically Nonlinear Organic Compound in Polymer Matrices
- Nonlinear Refractive Index of Organic Materials under High Pressure
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
- The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
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- Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
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- Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
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- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
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- Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- 霧化型励起酸素発生器の基礎研究
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- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
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- Positron Annihilation in Vitreous Silica Glasses
- 微量の酢酸を含む水-トルエン系の気液・液液平衡
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- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
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- Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
- Formation Mechanism of Interstitial Hydrogen Molecules in Crystalline Silicon
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- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
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