Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam

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概要

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• Defects in SiO_2/Si specimens were probed by using a monoenergetic positron beam. Doppler broadening profiles of the annihilation radiation were measured as a function of incident positron energy for SiO_2(100 nm)/Si specimens fabricated by wet, dry and ultradry oxidation. The diffusion of positrons in the Si substrate was found to be enhanced by an electric field caused by positive charges near the SiO_2/Si interface. The Doppler broadening profile corresponding to the annihilation of positrons in the Si substrate with the SiO_2 film grown by wet oxidation was found to be broader than those in the specimens fabricated by dry or ultradry oxidation. This was attributed to the fact that the concentration of oxygen clusters in the Si substrate for the specimen fabricated by wet oxidation was higher than those for the specimens fabricated by dry or ultradry oxidation.

• 社団法人応用物理学会の論文
• 1994-06-15

著者

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• Uedono A

  Univ. Tsukuba Tsukuba Jpn

• Uedono Akira

  Institute Of Applied Physics University Of Tsukuba

• WEI Long

  Institute of Materials Science, University of Tsukuba

• Wei L

  Institute Of Materials Science University Of Tsukuba

• Wei Long

  Institute Of Materials Science University Of Tsukuba

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Ohji Y

  Advanced Device Development Department Renesas Technology Corporation

• Ohji Yuzuru

  Central Research Laboratory Hitachi

• Tanigawa S

  Institute Of Applied Physics University Of Tsukuba

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

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