Study of Interactions of Hf and SiO2 Film for High-$k$ Materials
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概要
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Hf adsorption on thin SiO2 films was carried out using an ultrahigh-vacuum system with e-beam evaporation. The interaction of adsorbed Hf and SiO2 films was studied by Auger electron spectroscopy (AES), atomic force microscopy (AFM), and current–voltage ($I$–$V$) measurements. The leakage current of the SiO2 films increased with Hf adsorption temperature. The dielectric properties of the SiO2 layer were markedly degraded by Hf adsorption even at 300 °C. Additionally, Hf adsorbed on a SiO2 (6.3 nm)/Si substrate at 900 °C penetrated through the SiO2 layer and reacted with the Si substrate forming large concavities. Otherwise, Si diffused from the SiO2/Si interface to the surface of adsorbed Hf.
- 2006-08-15
著者
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Hasunuma Ryu
Tsukuba Research Center for Interdisciplinary Material Science, University of Tsukuba, Ibaraki 305-8573, Japan
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Chiu Te-Wei
Tsukuba Research Center for Interdisciplinary Material Science, University of Tsukuba, Ibaraki 305-8573, Japan
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Tanabe Masaaki
Institute of Applied Physics, University of Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Tsukuba Research Center for Interdisciplinary Material Science, University of Tsukuba, Ibaraki 305-8573, Japan
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Uedono Akira
Institute of Applied Physics, University of Tsukuba, Ibaraki 305-8573, Japan
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