Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2011-06-25
著者
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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OSHIMA Nagayasu
National Institute of Advanced Industrial Science and Technology (AIST)
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KURODA Ryunosuke
National Institute of Advanced Industrial Science and Technology (AIST)
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WATANABE Hiromichi
Institute of Applied Physics, University of Tsukuba
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KUBOTA Shoji
Institute of Applied Physics, University of Tsukuba
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TENJINBAYASHI Kazuki
Institute of Applied Physics, University of Tsukuba
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HAYASHIZAKI Noriyosu
Tokyo Institute of Technology
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Kubota Shoji
Institute Of Applied Physics University Of Tsukuba
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O'rourke Brian
National Institute Of Advanced Industrial Science And Technology (aist)
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Kuroda Ryunosuke
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Tenjinbayashi Kazuki
Institute Of Applied Physics University Of Tsukuba
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology (aist)
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Watanabe Hiromichi
Institute Of Applied Physics University Of Tsukuba
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
関連論文
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- Lasing at 352 nm of the NIJI-IV Storage-Ring Free-Electron Laser
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
- Positron Annihilation in Vitreous Silica Glasses
- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
- Properties of Low-k Cu Barrier SiOCNH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition using Hexamethyldisiloxane and Ammonia Gases
- Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy : Instrumentation, Measurement, and Fabrication Technology
- Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- Fabrication of Microparticle Layer by Annealing Microparticle/Polymer Composite
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
- Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
- Vacancy-Type Defects in Be-Implanted InP
- Free Volume in Polycarbonate Studied by Positron Annihilation : Effects of Free Radicals and Trapped Electrons on Positronium Formation : Structure and Mechanical and Thermal Properties of Condensed Matter
- Evaluation of SOI Substrates by Positron Annihilation
- Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
- Structure-modification model of porogen-based porous SiOC film with ultraviolet curing (Special issue: Advanced metallization for ULSI applications)
- Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
- Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
- Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
- Design of Terahertz-Wave Spectrophotometry by Compton Backscattering Using Relativistic Electron Bunches and their Coherent Synchrotron Radiations
- Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
- Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
- Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
- Reemission of Positrons from Mesh and Powder Moderators
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Study of Interactions of Hf and SiO2 Film for High-$k$ Materials
- Low-$k$ SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
- Enhanced Lattice Defect Formation Associated with Hydrogen and Hydrogen Embrittlement under Elastic Stress of a Tempered Martensitic Steel
- Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
- Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams
- Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation
- Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
- Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Evaluation of SOI Substrates by Positron Annihilation
- A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam