Low-$k$ SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
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概要
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We have developed low dielectric constant SiOCH films by plasma-enhanced chemical vapor deposition (PE-CVD) using hexamethyldisiloxane (HMDSO) containing a siloxane structure and water vapor (H2O) gases. Although the film was deposited using H2O vapor, the content of H2O is very small and the $k$ value can be reduced to the order of 2.5. The leakage current is small and on the order of $10^{-9}$ to $10^{-10}$ A/cm2 at 1 MV/cm2. The hardness and Young’s modulus are larger than 2 and 10 GPa, respectively at the $k$ value of 2.8. However the values decrease abruptly with decreasing $k$ value. The mechanism in which the structure and Young’s modulus of PE-CVD low-$k$ film decrease with changing $k$ value and deposition conditions is discussed.
- 2005-06-15
著者
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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SEINO Yutaka
National Institute of Advanced Industrial Science and Technology
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Shimoda Haruo
Semiconductor Process Laboratory Co. Ltd.
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Shioya Yoshimi
Semiconductor Process Laboratory Co. Ltd.
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Maeda Kazuo
Semiconductor Division Fujitsu Limited
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Shioya Yoshimi
Semiconductor Process Laboratory Co., Ltd., Minory Bldg., 2012-4 Endo, Fujisawa, Kanagawa 252-0816, Japan
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