Evaluation of Parameters in Atmospheric-Pressure Chemical Vapor Deposition of Borophosphosilicate Glass Using Tetraethylorthosilicate and Ozone : Semiconductors
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概要
- 論文の詳細を見る
The effective parameters for the atmospheric-pressure chemical vapor deposition (APCVD) of borophosphosilicate glass (BPSG) using tetraethylorthosilicate (TEOS) and ozone were evaluated by designing an experiment. Source efficiencies of the deposition and doping were evaluated at constant boron and phosphorus concentrations. Each parameter was also characterized in terms of uniformity and film properties, such as thermal shrinkage and wet etch rate. Interactions between boron and phosphorus were discussed in terms of the difference in influential parameters and reaction rates. The deposition was controlled by the deposition temperature and the deposition rate, which are the dominant parameters of the film quality and deposition efficiency. The balance between gas flow rate and temperature is important to improve deposition and doping uniformity.
- 社団法人応用物理学会の論文
- 2001-10-15
著者
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Maeda Kohji
Department Of Physics Engineering Mie University
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MAEDA Kazuo
Semiconductor Process Laboratory Co., Ltd.
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Maeda K
Semiconductor Process Laboratory Co. Ltd.
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Nishimoto Y
Semiconductor Process Laboratory Co. Ltd.
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Nishimoto Yuko
Kanagawa University Department Of Chemistry
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Nishimoto Yuko
Semiconductor Process Laboratory Co. Ltd.
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TOKUMASU Noboru
Semiconductor Process Laboratory Co., Ltd.
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Maeda Kazuo
Semiconductor Division Fujitsu Ltd.
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Maeda Kazuo
Semiconductor Division Fujitsu Limited
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Tokumasu N
Semiconductor Process Laboratory Co. Ltd.
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Tokumasu Noboru
Semiconductor Process Laboratory Co. Ltd.
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