Properties of Low-k Cu Barrier SiOCNH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition using Hexamethyldisiloxane and Ammonia Gases
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-02-15
著者
-
Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
-
Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
-
Suzuki R
National Institute Of Advanced Industrial Science And Technology
-
Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
-
SHIOYA Yoshimi
Semiconductor Process Laboratory Co., Ltd.
-
MAEDA Kazuo
Semiconductor Process Laboratory Co., Ltd.
-
ISHIMARU Tomomi
Canon Sales Co., Inc.
-
IKAKURA Hiroshi
Canon Sales Co., Inc.
-
MASUBUCHI Tomoaki
Canon Sales Co., Inc.
-
Ohshima Takeshi
Japan Atomic Energy Research Institute (jaeri)
-
Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
-
Shioya Yoshimi
Semiconductor Process Laboratory Co. Ltd.
-
Ohgaki Takeshi
National Inst. For Materials Sci.
-
Ohshima T
Japan Atomic Energy Res. Inst. Takasaki Jpn
-
Ikakura Hiroshi
Canon Sales Co. Inc.
-
Ishimaru Tomomi
Canon Sales Co. Inc.
-
Masubuchi Tomoaki
Canon Sales Co. Inc.
-
Maeda Kazuo
Semiconductor Division Fujitsu Limited
-
Maeda Kazuo
Semiconductor Process Laboratory Co. Ltd.
関連論文
- Oxygen tracer diffusion in magnesium-doped ZnO ceramics
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- Single-, Double- and Triple-Electron Capture Cross Sections for Multicharged Slow Carbon Ions in H_2, CH_4, C_2H_6, C_3H_8 and CO_2 Molecules
- Reversal of UV Sensitivity and Loss Reduction of SiON Microring Resonator by Thermal Annealing
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Lasing at 352 nm of the NIJI-IV Storage-Ring Free-Electron Laser
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Oxygen diffusion in zinc-oxide thin films prepared by pulsed-laser deposition
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Investigation on buffer layer for InN growth by molecular beam epitaxy
- Effect of post-annealing on structural and optical properties, and elemental distribution in heavy Eu-implanted ZnO thin films
- Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges
- Radiation Resistant Low Bandgap InGaASP Solar Cell for Multi-Junction Solar Cells : Semiconductors
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
- Properties of Low-k Cu Barrier SiOCNH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition using Hexamethyldisiloxane and Ammonia Gases
- Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy : Instrumentation, Measurement, and Fabrication Technology
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- Fabrication of Microparticle Layer by Annealing Microparticle/Polymer Composite
- Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
- Reemission of Positrons from Mesh and Powder Moderators
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Preparation and Characterization of ZnO and (Zn,Mg)O films doped with Al
- Photocatalytic machining of organic molecular layer on a Si wafer surface by use of a porous TiO_2 micro wire
- Synthesis of ZnO Bicrystals Doped with Co or Mn and Their Electrical Properties
- Ion implantation and diffusion behavior of silver in zinc oxide
- Development of ZnO-based surface plasmon resonance gas sensor and analysis of UV irradiation effect on NO2 desorption from ZnO thin films
- Role of Crystalline Polarity in Interfacial Properties of Zinc Oxide Varistors
- The Effect of Vapor Etching on "Diffuse-Up" of Buried Impurities into Epitaxial Layer
- Synthesis and Characterization of ZnO/Glass/ZnO Structures Showing Highly Nonlinear Current-Voltage Characteristics
- Electric Properties of Zinc Oxide Epitaxial Films Grown by Ion-Beam Sputtering with Oxygen-Radical Irradiation
- Evaluation of Parameters in Atmospheric-Pressure Chemical Vapor Deposition of Borophosphosilicate Glass Using Tetraethylorthosilicate and Ozone : Semiconductors
- Morphology Evolution of SiO_2 Films Deposited by Tetraethylorthosilicate/O_3 Atmospheric-Pressure Chemical Vapor Deposition on Thermal SiO_2
- Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone
- Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
- Electrical Characteristics of Polycrystalline Silicon-Aluminum Oxide-Silicon Dioxide-Silicon Structure
- Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces
- Reversal of UV Sensitivity and Loss Reduction of SiON Microring Resonator by Thermal Annealing
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Reemission of Positrons from Mesh and Powder Moderators
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Low-$k$ SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
- Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams
- Simultaneous Diffusion of Oxygen Tracer and Lithium Impurity in Aluminum Doped Zinc Oxide
- Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams
- Crystallinity and Polarity of Indium Nitride Films Grown on the c-face of Zinc Oxide