Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-11-15

著者

• MIKADO Tomohisa

  Electrotechnical Laboratory

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• Uedono A

  Univ. Tsukuba Tsukuba Jpn

• Uedono Akira

  Institute Of Applied Physics University Of Tsukuba

• Ohgaki H

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

• Ohgaki Hideaki

  Institute Of Advanced Energy Kyoto University

• Ohgaki Hideaki

  National Institute Of Advanced Industrial Science And Technology

• Suzuki R

  National Institute Of Advanced Industrial Science And Technology

• Suzuki Ryoichi

  National Institute Of Advanced Industrial Science And Technology

• MIKADO Tomohisa

  National Institute of Advanced Industrial Science and Technology (AIST)

• Mikado Tomohisa

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Moriya Tsuyoshi

  Institute Of Material Science University Of Tsukuba

• SUZUKI Ryoichi

  Institute of Materials Science, University of Tsukuba

• MIKADO Tomohisa

  Institute of Materials Science, University of Tsukuba

• TOYAMA Masaharu

  Toshiba Research and Development Center

• Tanigawa S

  Institute Of Applied Physics University Of Tsukuba

• Mikado Tomohisa

  Institute Of Material Science University Of Tsukuba

• Mikado T

  Electrotechnical Laboratory

• Mikado Tomohisa

  Institute Of Materials Science University Of Tsukuba

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

• Ohgaki Hideaki

  Institute of Advanced Energy (IAE), Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan

関連論文

• Characterization of Diamond Films by Means of a Pulsed Positron Beam
• Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
• Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
• 8p-CD-6 Fragmentation of the stretched 7^+and stretched 4-statea inNi isotopes.
• 1p-PS-17 RAIDEN用1.8mSWP.Cの使用の試み
• 30p-EC-8 (p^^-,^3He)反応による深部2空孔状態の探索
• 1a-BF-14 強電界放出電子銃を使用した超軟X線源
• Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
• Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
• Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
• Positron Annihilation in Proton Irradiated Czochralski-Grown Si
• 14a-D-1 Optical Potentials of 1.37 GeV Alpha-Particle Scattering from Ca Isotopes
• 4p-PSK-2 スペクトログラフRAIDEN用レイトレース測定系
• 4a-C-2 (d,p)反応によるCa同位体核の単空孔状態の研究
• 1p-H-5 (p,d)反応による^Caの深部空孔状態に関する研究
• 30p-E-5 大型分割電極型位置検出比例計数管に関する基礎研究
• 7p-F-5 分割陰極読み出しによる大型焦点面検出器,位置検出の基礎研究
• Free Electron Laser Oscillation down to the Deep UV Range Using a Small-Scale Storage Ring
• Lasing at 352 nm of the NIJI-IV Storage-Ring Free-Electron Laser
• Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
• Development of Soft X-Ray Sources with Electron Guns of Field Emission- and Thermal Cathode-Types and Their Application to Counter Experiments
• Non-Linearity in Position Sensing with Cathode Strips of a Single Wire Proportional Counter
• Characteristics of the Self-Quenching Streamer Mode in a Gas Counter
• Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Study on Energy Variable Laser-Compton Gamma-ray with a Fixed Energy Electron Beam
• Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
• Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
• The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
• Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
• Electron Beam Qualities with and without Free Electron Laser Oscillations in the Compact Storage Ring NIJI-IV
• Amorphization Processes and Structural Relaxation in Ion Implanted Si
• Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
• Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
• Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
• The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
• Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
• Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
• Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
• Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
• Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
• Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
• Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
• Positron Annihilation in Vitreous Silica Glasses
• Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
• Properties of Low-k Cu Barrier SiOCNH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition using Hexamethyldisiloxane and Ammonia Gases
• Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy : Instrumentation, Measurement, and Fabrication Technology
• Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
• Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
• Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
• Evolution of a Storage Ring Free Electron Laser Micropulse in a Macropulse Zone
• Design of a New Optical Klystron for Developing Infrared Free Electron Lasers in the Storage Ring NIJI-IV
• Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
• Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
• Defects in TiN Films Probed by Monoenergetic Positron Beams
• Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
• Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
• Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
• Fabrication of Microparticle Layer by Annealing Microparticle/Polymer Composite
• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
• Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
• Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
• Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
• Decay Rate Plot of Stored Beam Current and Touschek Limit of Current-Lifetime Product
• Emission-Angle Dependence of Electron Transmission through Thick Layers with Initial Energy of 24.8 MeV
• Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
• Vacancy-Type Defects in Be-Implanted InP
• Free Volume in Polycarbonate Studied by Positron Annihilation : Effects of Free Radicals and Trapped Electrons on Positronium Formation : Structure and Mechanical and Thermal Properties of Condensed Matter
• Evaluation of SOI Substrates by Positron Annihilation
• Evaluation of SOI Substrates by Positron Annihilation
• Average Energy Loss of 24.8-MeV Electrons after Passing through and Backscattering from Thick Layers of C,Al,Cu,and Pb
• Anomalous Energy Loss and Straggling of 24.8 MeV Electrons through Thin single Crystals of Germanium
• The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
• Fine Structure of Giant Resonance in the ^Si(γ, abs) Reaction
• Super High Resolution Measurement of Fine Structure in the Total Photonuclear Cross Section of ^C
• Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
• Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam
• Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
• Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
• Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
• Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
• Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
• Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
• Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
• Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces
• Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Reemission of Positrons from Mesh and Powder Moderators
• Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
• Low-$k$ SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
• Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams
• Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams

もっと見る 閉じる

スポンサーリンク