Decay Rate Plot of Stored Beam Current and Touschek Limit of Current-Lifetime Product

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-11-20

著者

• Yamazaki Tetsuo

  Elecltrotechnical Laboratory:(present Address) Institute Of Advanced Energy Kyoto University

• MIKADO Tomohisa

  Electrotechnical Laboratory

• CHIWAKI Mitsukuni

  Elecltrotechnical Laboratory

• MIKADO Tomohisa

  National Institute of Advanced Industrial Science and Technology (AIST)

• Sugiyama Shinichi

  College Of Engineering Nihon University

• Moriya Tsuyoshi

  Institute Of Material Science University Of Tsukuba

• Noguchi T

  Sony Corp. Yokohama Jpn

• TOYAMA Masaharu

  Toshiba Research and Development Center

• TOMIMASU Takio

  Quantum Technology Division, Electrotechnical Laboratory

• YAMAZAKI Tetsuo

  Quantum Technology Division, Electrotechnical Laboratory

• MIKADO Tomohisa

  Quantum Technology Division, Electrotechnical Laboratory

• SUGIYAMA Suguru

  Quantum Technology Division, Electrotechnical Laboratory

• CHIWAKI Mitsukuni

  Quantum Technology Division, Electrotechnical Laboratory

• NAKAMURA Takeshi

  Quantum Technology Division, Electrotechnical Laboratory

• NOGUCHI Tsutomu

  Quantum Technology Division, Electrotechnical Laboratory

• Tomimasu Takio

  Electrotechnical Laboratory:(present Address)fel Engineering Corp.

• Tomimasu Takio

  Quantum Technology Division Electrotechnical Laboratory

• Mikado T

  Electrotechnical Laboratory

• Mikado Tomohisa

  Institute Of Materials Science University Of Tsukuba

• Nakamura Takeshi

  Quantum Technology Division Electrotechnical Laboratory

関連論文

• Characterization of Diamond Films by Means of a Pulsed Positron Beam
• Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
• Free Electron Laser Oscillation down to the Deep UV Range Using a Small-Scale Storage Ring
• Lasing at 352 nm of the NIJI-IV Storage-Ring Free-Electron Laser
• Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
• P1-40 Imaging System for Ultrasonic Endoscopy by Using Transmitter-Receiver Pair in the Pulse Compression Technique(Poster session 1)
• Marked Enhancement of Photoconductivity and Quenching of Luminescence in Poly(2,5-dialkoxy-p-phenylene vinylene) upon C_ Doping
• Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
• Electron Beam Qualities with and without Free Electron Laser Oscillations in the Compact Storage Ring NIJI-IV
• Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
• Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
• Focusing Method in High-Impedance Material using Transmission Line Coupler : Ultrasonic Transmission Line Coupling Method
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
• Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
• Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
• Evolution of a Storage Ring Free Electron Laser Micropulse in a Macropulse Zone
• Design of a New Optical Klystron for Developing Infrared Free Electron Lasers in the Storage Ring NIJI-IV
• Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
• Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
• Defects in TiN Films Probed by Monoenergetic Positron Beams
• Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
• Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
• Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
• Development of a New System for Measuring Skull Bone Thickness by the Pulse compression Method
• Ultrasonic Flaw Detection for High Impedance Materials Using a Transmission Line Coupling Method
• High Signal-to-Noise Ratio Ultrasonic Point Detection Method using a Fused Quartz Rod as a Pulse Compression Filter and a Sensor
• Wide View-Angle Imaging Obtained by Compounding Multidirection Images through a Narrow Window
• Tungsten Photochemical Vapor Deposition Mechanism in WF_6+H_2 System : II. Gas-Molecule Adspecies Collision Model
• Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
• Decay Rate Plot of Stored Beam Current and Touschek Limit of Current-Lifetime Product
• Emission-Angle Dependence of Electron Transmission through Thick Layers with Initial Energy of 24.8 MeV
• Color-Variable Light-Emitting Diode Utilizing Conducting Polymer Containing Fluorescent Dye
• Tungsten Photochemical Vapor Deposition Mechanism in WF_6+H_2 System : I. Adspecies Excitation Model
• Electrical Transport and Electron Spin Resonance in Electron-Beam-Irradiated Polyacetylene in the Presence of SF_6 Gas
• Electrical and Optical Properties of Polythiophene Irradiated with Electron Beam in the Presence of SF_6 and Their Application as Radiation Detector
• A Super Thin Film Transistor in Advanced Poly Si Films
• Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
• (Pb, La)(Zr, Ti)O_3 Films by Multiple Electrophoretic Deposition / Sintering Processing : Thin Films
• Large Area Exposure in Synchrotron Radiation Lithography Utilizing the Steering of the Electron Beam in the Storage Ring
• Average Energy Loss of 24.8-MeV Electrons after Passing through and Backscattering from Thick Layers of C,Al,Cu,and Pb
• Anomalous Energy Loss and Straggling of 24.8 MeV Electrons through Thin single Crystals of Germanium
• Least Squares Analysis of Hall Data and Donor Levels in Gallium Phosphide
• Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : III. Effect of Holding Time at Growth Temperature
• Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : II. Effect of Substrate Orientation
• Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
• Grain Growth and Conductive Characteristics of Super Thin Polysilicon Films by Oxidation
• GaP Green Light-Emitting Diodes with p-n-p-n Structure
• Green and Red Electroluminescences from Diffused Gallium Phosphide p-n Junctions
• Effect of Heat Treatment on Gallium Arsenide Crystals : III. Electrical Properties of Thermally Converted p-Type Crystals
• Effect of Heat Treatment on Gallium Arsenide Crystals : II. Properties of Crystals Heat-Treated in Chalcogen Vapor
• Kinetics of Zn-O Complex Formation in GaP Crystal
• Effect of Heat Treatment on Gallium Arsenide Crystals. : I. Thermal Conversion in Excess Arsenic Vapor
• Kinetics of the Vapor Growth of II-VI Compound Crystals. II. : Zinc Selenide
• Anomalous Capacitance in Gallium Phosphide Electroluminescent p-n Junctions
• Acceptors and the Edge Emissions in CdS and ZnSe
• Transmission of 100-MHz-range ultrasound through a fused quartz fiber
• An Electron Undulating Ring Dedicated to VLSI Lithography
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams

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