Effect of Heat Treatment on Gallium Arsenide Crystals : III. Electrical Properties of Thermally Converted p-Type Crystals
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概要
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Electrical properties were measured from 77° to 400°K for p-GaAs crystals obtained by heat treatment of melt-grown undoped n-GaAs crystals in arsenic vapor. Temperature dependence of hole concentration was best explained with a double acceptor level scheme, in which the first and the second ionization energies are about 0.13eV and 0.25eV, respectively. This double acceptor is a newly revealed one probably related to some native defects, and differs from the acceptors present before heat treatment, which seem to be more shallow single acceptors. Analysis of Hall mobility showed that the most dominant scattering mechanism for holes is the polar optical scattering, next the non-polar scattering, and then the deformation potential scattering. The scatterings by ionized impurities and space charge regions are not important in p-GaAs.
- 社団法人応用物理学会の論文
- 1970-04-05
著者
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TOYAMA Masaharu
Toshiba Research and Development Center
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IKOMA Hideaki
Toshiba Research and Development Center, Tokyo Shibaura, Electric Co., Ltd.
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Ikoma Hideaki
Toshiba Central Research Laboratory
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Toyama Masaharu
Toshiba Central Research Laboratory
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