An Electron Undulating Ring Dedicated to VLSI Lithography

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概要

• 論文の詳細を見る

• The unique capability of synchrotron radiation (SR) from the electron undulating ring has been shown to be advantageous for expanding the exposed area of SR in VLSI lithography. Vertical and horizontal undulating motions of stored beams have been demonstrated around the horizontal design orbit using two perturbator magnets. The maximum vertical displacement of a 500-MeV beam is ±10mm and the maximum vertical tilt angle of the undulating beam near the nodes is ±2.5 mrad for a perturbator field of 130 gauss with an azimuthal length of 28cm. The vertical undulating beam near the node can expand the exposed area of SR by a factor of more than five. The perturbator field dependence of the tilt angle and the relation between the nodes observed in the undulating motion and the betatron numbers are explained using an empirical expression.

• 社団法人応用物理学会の論文
• 1987-05-20

著者

• Tomimasu Takio

  Quantum Technology Division Electrotechnical Laboratory

関連論文

• Decay Rate Plot of Stored Beam Current and Touschek Limit of Current-Lifetime Product
• Emission-Angle Dependence of Electron Transmission through Thick Layers with Initial Energy of 24.8 MeV
• An Electron Undulating Ring Dedicated to VLSI Lithography

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