Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-15
著者
-
SUZUKI Ryoichi
Electrotechnical Laboratory
-
MIKADO Tomohisa
Electrotechnical Laboratory
-
TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
-
UEDONO Akira
Institute of Materials Science, University of Tsukuba
-
Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
-
Ohdaira Toshiyuki
Department Of Nuclear Engineering Kyoto University
-
Uedono A
Univ. Tsukuba Tsukuba Jpn
-
Uedono Akira
Institute Of Applied Physics University Of Tsukuba
-
KAWANO Takao
Radioisotope Center,University of Tsukuba
-
Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
-
Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
-
Kawano Takao
Radioisotope Center University Of Tsukuba
-
Suzuki R
National Institute Of Advanced Industrial Science And Technology
-
Kawano T
Osaka Univ. Osaka Jpn
-
Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
-
Moriya T
Institute Of Material Science University Of Tsukuba
-
Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
-
MIKADO Tomohisa
National Institute of Advanced Industrial Science and Technology (AIST)
-
Kawano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
-
OHDAIRA Toshiyuki
Electrotechnical Laboratory
-
MORIYA Tsuyoshi
Institute of Materials Science, University of Tsukuba
-
Kitano T
Fundamental Research Laboratories Nec Corporation
-
Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
-
Mikado Tomohisa
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Ohshima Takeshi
Japan Atomic Energy Research Institute (jaeri)
-
Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
-
Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
-
Moriya Tsuyoshi
Institute Of Material Science University Of Tsukuba
-
WATANABE Masahito
ULSI Device Development Laboratories, NEC Corporation
-
KOMURO Naoyuki
Institute of Materials Science, University of Tsukuba
-
Moriya T
Tokyo Metropolitan University Graduate School Of Engineering
-
TOYAMA Masaharu
Toshiba Research and Development Center
-
Komuro Naoyuki
Institute Of Materials Science University Of Tsukuba
-
Ohgaki Takeshi
National Inst. For Materials Sci.
-
Tanigawa S
Institute Of Applied Physics University Of Tsukuba
-
Ohshima T
Japan Atomic Energy Res. Inst. Takasaki Jpn
-
Mikado T
Electrotechnical Laboratory
-
Ohgaki T
National Institute For Materials Science (nims)
-
Mikado Tomohisa
Institute Of Materials Science University Of Tsukuba
-
Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
関連論文
- Oxygen tracer diffusion in magnesium-doped ZnO ceramics
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
- Si基板上弗化物系サブバンド間遷移レーザの理論解析
- Si基板上弗化物系サブバンド間遷移レーザの理論解析(シリコン系量子効果デバイス,量子効果デバイス及び関連技術)
- Si基板上弗化物系サブバンド間遷移レーザの理論解析(シリコン系量子効果デバイス,量子効果デバイス及び関連技術)
- ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード(光・電子ナノデバイス)
- Si基板上(CdF_2/CaF_2)サブバンド間遷移レーザ構造のEL発光特性(光・電子ナノデバイス)
- ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード(光・電子ナノデバイス)
- Si基板上(CdF_2/CaF_2)サブバンド間遷移レーザ構造のEL発光特性(光・電子ナノデバイス)