Ion implantation and diffusion behavior of silver in zinc oxide
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概要
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Silver implantation (75 keV, 2 × 1014 ions/cm2) in ZnO ceramics was carried out at room temperature to characterize the diffusion phenomenon. Annealing caused Ag evaporation from the sample. Results suggest that it is difficult to incorporate Ag into Zn site by annealing. The Ag profile with the monotonous decrease in concentration below 3 × 1017/cm3 was observed in ZnO annealed at 900°C. Above results become the basic results for producing the ZnO sensor used the reaction at surface and the grain boundary.
著者
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
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SAKAGUCHI Isao
National Institute for Materials Science
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Ohshima Takeshi
Japan Atomic Energy Research Institute (jaeri)
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
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Sakaguchi I
Optical Materials Center National Inst. For Materials Sci.
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SAKAGUCHI Isao
Optronic Materials Center, National Institute for Materials Science
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ADACHI Yutaka
Optronic Materials Center, National Institute for Materials Science
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OHASHI Naoki
Optronic Materials Center, National Institute for Materials Science
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Ohgaki Takeshi
National Inst. For Materials Sci.
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Ohshima T
Japan Atomic Energy Res. Inst. Takasaki Jpn
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Ohgaki T
National Institute For Materials Science (nims)
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WATANABE Ken
Sense Materials Center, National Institute for Materials Science
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OHGAKI Takeshi
Sense Materials Center, National Institute for Materials Science
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NAKAGAWA Tsubasa
Optronic Materials Center, National Institute for Materials Science
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HISHITA Shunichi
Sense Materials Center, National Institute for Materials Science
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HANEDA Hajime
Sense Materials Center, National Institute for Materials Science
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Watanabe Ken
International Center For Young Scientists (icys) And International Center For Materials Nanoarchitec
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Nakagawa Tsubasa
Optronic Materials Center National Inst. For Materials Sci.
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