Holes in the Valence Band of Superconducting Boron-Doped Diamond Film Studied by Soft X-ray Absorption and Emission Spectroscopy(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
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概要
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Carbon- and boron-2p states of superconducting and non-superconducting boron-doped diamond (BDD) samples are measured using soft X-ray emission and absorption spectroscopy (XES and XAS) near C- and B-K edges. The electronic structure of B 2p does not show a marked boron-doping dependence, except that a considerable amount of in-gap state in empty states is observed. In C-K XAS spectra, two peaks H and I are observed around the Fermi level. The H peak is attributed to 2p state of carbon first-nearest neighboring to the dopant boron atoms (1NN-C), and the I peak to 2p state of carbon further than 1NN-C from an impurity boron. Incoherent (normal-excitation) XES spectra do not show a large chemical shift by B-doping, but its intensity just below the valence band maximum (VBM) decreases with B-doping. It cannot be interpreted within a simple rigid band model. An elastic peak of I-excited C-K XES spectrum and the width of I-peak of C-K XAS spectrum suggest that impurity state is localized in non-superconducting BDD but is not in superconducting BDD. Namely impurity state of superconducting BDD is merged with the valence band, and holes in the merged state play an important role in the occurrence of superconductivity of BDD.
- 社団法人日本物理学会の論文
- 2008-05-15
著者
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Ederer David
Department Of Physics Tulane University
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Kawarada Hiroshi
School Of Science And Engineering Waseda University
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Kawarada Hiroshi
School Of Science & Engineering Waseda University
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OGUCHI Tamio
Department of Quantum Matter, ADSM, Hiroshima University
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KUROKI Kazuhiko
Department of Applied Physics and Chemistry, The University of Electro-Communications
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Nakamura J
Univ. Electro‐communications Tokyo Jpn
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Nakamura Jin
Department Of Applied Physics And Chemistry The University Of Electro-communications
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Perera Rupert
Center For X-ray Optics Lawrence Berkeley National Laboratory
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YAMADA Nobuyoshi
Department of Applied Physics and Chemistry, The University of Electro-Communications
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OKADA Kozo
Department of Physics, Okayama University
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TAKANO Yoshihiko
National Institute for Materials Science
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NAGAO Masanori
National Institute for Materials Science
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SAKAGUCHI Isao
National Institute for Materials Science
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TAKENOUCHI Tomohiro
School of Science and Engineering, Waseda University
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OGUCHI Tamio
National Research Institute for Metals
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Yokoya Takayoshi
National Institute For Materials Science
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Takano Yoshihiko
National Inst. For Materials Sci. Ibaraki Jpn
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Oguchi Tamio
Department Of Quantum Matter Graduate School Of Advanced Sciences Of Matter (adsm) Hiroshima Univers
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Oguchi Tamio
Department Of Engineering Physics The University Of Electro-communications
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Kuroki Kazuhiko
Department Of Applied Physics And Chemistry The University Of Electro-communications
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Yamada Nobuyoshi
Department Of Applied Physics And Chemistry The University Of Electro-communications
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Yamada Nobuyoshi
Department Of Applied Physics And Chemistry University Of Electro-communications
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Oguchi T
Hiroshima Univ. Hiroshima
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Okada Kozo
Department Of Physics Faculty Of Science Okayama University
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Takenouchi Tomohiro
School Of Science And Engineering Waseda University
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Okada Kozo
Department Of Physics Okayama University
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Yamada N
Department Of Applied Physics And Chemistry The University Of Electro-communications
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Sakaguchi I
Optical Materials Center National Inst. For Materials Sci.
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Sakaguchi Isao
National Inst. Materials Sci. Ibaraki Jpn
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Yamada Noboru
Optical Disk Systems Development Center Matsushita Electric Industrial Co. Ltd.
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OGUCHI Takehiko
Department of Physics, Tokyo Institute of Technology Oh-okayama
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OKADA Kozo
Department of Biological Chemistry, Faculty of Pharmacy, Kinki University
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OGUCHI Takehiko
Department of Physics, Tokyo Institute of Technology : Department of Sciences and Mathematics, The Technological University of Nagaoka
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